Hostname: page-component-78c5997874-lj6df Total loading time: 0 Render date: 2024-11-10T14:16:37.987Z Has data issue: false hasContentIssue false
  • English
  • Français

Behaviour of Nanocrystalline Silicon Carbide Under Low Energy Heavy Ion Irradiation

Published online by Cambridge University Press:  31 January 2011

Dominique Gosset ,
Laurence Luneville ,
Gianguido Baldinozzi ,
David Simeone ,
Auregane Audren  and
Yann Leconte
Dominique Gosset
Affiliation:
dominique.gosset@cea.fr, CEA, MFE - DMN SRMA LA2M, Gif/Yvette, France
Laurence Luneville
Affiliation:
laurence.luneville@cea.fr, CEA, MFE - DM2S SERMA LLPR, Gif/Yvette, France
Gianguido Baldinozzi
Affiliation:
gb@ecp.fr, CNRS, MFE - SPMS - Ecole Centrale, Chatenay-Malabry, France
David Simeone
Affiliation:
david.simeone@cea.fr, CEA, MFE - DMN SRMA LA2M, Gif/Yvette, France
Auregane Audren
Affiliation:
auregane.audren@cea.fr, CEA, DSM IRAMIS SPAM, Gif/Yvette, France
Yann Leconte
Affiliation:
yann.leconte@cea.fr, CEA, DSM IRAMIS SPAM, Gif/Yvette, France
Get access

Abstract

Silicon carbide is one of the most studied materials for core components of the next generation of nuclear plants (Gen IV). In order to overcome its brittle properties, materials with nanometric grain size are considered. In spite of the growing interest for nano-structured materials, only few experiments deal with their behaviour under irradiation. To assess and predict their evolution under working conditions, it is important to characterize their microstructure and structure. To this purpose, we have studied microcrystalline and nanocrystalline samples before and after irradiation at room temperature with 4 MeV Au ions. In fact, it is well established that such irradiation conditions lead to amorphisation of the material, which can be restored after annealing at high temperature. We have performed isochronal annealings of both materials to point out the characteristics of the healing process and eventual differences related to the initial microstructure of the samples. To this purpose Grazing Incidence X-Ray Diffraction has been performed to determine the microstructure and structure parameters. We observe the amorphisation of both samples at similar doses but different annealing kinetics are observed. The amorphous nanocrystalline sample recovers its initial crystalline state at higher temperature than the microcrystalline one. This effect is clearly related to the initial microstructures of the materials. Therefore, the grain size appears as a key parameter for the structural stability and mechanical properties of this ceramic material under irradiation.

Keywords

x-ray diffraction (XRD)radiation effectsmicrostructure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1215: Symposium V – Materials Research Needs to Advance Nuclear Energy , 2009 , 1215-V16-45
Copyright
Copyright © Materials Research Society 2010

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1http://www.gen-4.orgGoogle Scholar
2 Yvon, P. Carré, F., J. Nucl. Mat. 385(2009) 217–222 Google Scholar
3 Reimanis, I.E. Mat. Sci. Eng. A237(1997) 159–167 Google Scholar
4 Jiang, B. et al. , Int. J. Plast. 20(2004) 2007–2026 Google Scholar
5 Surblé, S. et al. , Ionics 14(2008) 33–36 Google Scholar
6 Baldinozzi, G. et al. , Phys. Rev. B 90-21(2003) 216103 Google Scholar
7 Snead, L.L. et al. , J. Nucl. Mat. 371(2007) 329–377 Google Scholar
8R.Wyckoff, W.G. Crystal Structures, Vol. I. New York, Interscience(1963)Google Scholar
9 Zinkle, S.J. Snead, L.L. Nucl. Instr. Meth. Phys. Rev. B-116(1996) 92–101 Google Scholar
10 Jiang, W. Zhang, Y. and Weber, W. J. Phys. Rev. B70, 165208(2004)Google Scholar
11 Satoh, M. et al. , J. Appl. Phys. 89-3(2001) 1986 Google Scholar
12 Snead, L.L. et al. , Nucl. Instr. Meth. Phys. Res. B-141(1998) 123–132 Google Scholar
13 Herlin-Boime, N. et al. , J. Nanop. Res. 6(2004) 63–70 Google Scholar
14 Pujar, V.V. Cawley, J.D. J. Am. Cer. Soc. 84]11](2001) 2645 Google Scholar
15 Luneville, L. et al. , this meetingGoogle Scholar
16 Ziegler, J. http://www.srim.orgGoogle Scholar
17 Zhang, Yanwen et al. , J. Appl. Phys., 105, 104901(2009)Google Scholar
18 Benyagoub, A. et al. , Appl. Phys. Lett. 89(2006) 241914 Google Scholar
19 Simeone, D. et al. , this meetingGoogle Scholar
20 Simeone, D. Gosset, D. CEA report CEA-R-5975(2001)Google Scholar
21 Bérar, J.F., Baldinozzi, G. IUCR-CPD-Newletters 20(1998)Google Scholar
22 Serruys, Y. et al. , Nucl. Instr. Meth. Phys. Res. B-240(2005), 124–127 Google Scholar
23 Bolse, W. Nucl. Instr. Meth. Phys. Res. B-148(1999) 83–92 Google Scholar