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The Benefits of HCl in the Growth of Silicon Nanowires by Chemical Vapour Deposition: Growth of Small Diameter Nanowires and Controlled Facet Evolution

Published online by Cambridge University Press:  01 February 2011

Fabrice Oehler ,
Pascal Gentile ,
Thierry Baron  and
Pierre Ferret
Fabrice Oehler
Affiliation:
fabrice.oehler@cea.fr, CEA/INAC, SP2M, Grenoble, France
Pascal Gentile
Affiliation:
pgentile@cea.fr, CEA/INAC, SP2M, Grenoble, France
Thierry Baron
Affiliation:
tbaron@cea.fr, CNRS/LTM, Grenoble, France
Pierre Ferret
Affiliation:
pferret@cea.fr, CEA, LETI, Grenoble, France
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Abstract

The effects of hydrogen chloride (HCl) on the growth of silicon nanowires by Chemical Vapour Deposition are investigated. HCl is found to enable the growth of small diameter gold-catalyzed silicon nanowires while reducing the kink occurrence. Specific growth sequences are presented in order to obtain a one-to-one ratio of nanowire growth versus gold colloidal seed. Other growth sequences using HCl are illustrated but achieve mixed results concerning the nanowire structure and the surface state.

Keywords

Sichemical vapor deposition (CVD) (deposition)Cl
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1258: Symposia P/Q/R – Low-Dimensional Functional Nanostructures-Fabrication, Characterization and Applications , 2010 , 1258-P05-06
Copyright
Copyright © Materials Research Society 2010

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