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Blue Shifting the Excitonic Transition in Multiple Quantum Wells by Rapid Thermal Processing

Published online by Cambridge University Press:  25 February 2011

Jay I. Malin  and
K. C. Hsieh
Jay I. Malin
Affiliation:
Center for Compound Semiconductor Microelectronics, Materials Research Laboratory, and Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801.
K. C. Hsieh
Affiliation:
Center for Compound Semiconductor Microelectronics, Materials Research Laboratory, and Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801.
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Abstract

Silicon doped multiple quantum well (MQW) detector structures were rapid thermally processed (RTP) for the purpose of blue shifting the excitonic transition. Structures were encapsulated with Sio2 prior to the anneal as such enhanced the degree to which interdiffusion occurred within the structure. This further lead to a blue shift in the exciton energy corresponding to the n=l transition which was observed by photoluminescence (PL) measurements. Having examined the PL spectra of various SiO2 encapsulated samples and performing variable intensity PL measurements, a peak corresponding to a defect at ∼ 80meV above the valence band was further observed. In addition, a variation in the degree to which disordering occurs has been observed under various physical conditions including doping and GaAs capping.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 281: Symposium D – Semiconductor Heterostructures for Photonic and Electronic Applications , 1992 , 91
Copyright
Copyright © Materials Research Society 1993

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References

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