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Bonding, Splitting and Thinning by Porous Si in ELTRAN®; SOI-Epi Wafer™

Published online by Cambridge University Press:  21 March 2011

Kenji Yamagata  and
Takao Yonehara
Kenji Yamagata
Affiliation:
ELTRAN Business Center, Canon Inc. 6770 Tamura, Hiratsuka-city, Kanagawa 254-0013, Japan
Takao Yonehara
Affiliation:
ELTRAN Business Center, Canon Inc. 6770 Tamura, Hiratsuka-city, Kanagawa 254-0013, Japan
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Abstract

ELTRAN is a unique technique to produce the SOI wafers using a porous Si material in semiconductor process. In ELTRAN process, it is required to form the porous Si layer on entire wafer surface uniformly, stably and mass productively without contaminations. In this investigation, we have carried out the simulation of current density distribution to unify the porous layer thickness by finite element method. Canon designed and completed an automatic anodization apparatus. As a result, we could produce the 8 and 6 inches porous Si wafers and ELTRAN SOI wafers stably. And we also developed successfully 300mm ELTRAN SOI wafers with excellent SOI film thickness uniformity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 681: Symposium I – Wafer Bonding and Thinning Techniques for Materials Integration , 2001 , I8.2
Copyright
Copyright © Materials Research Society 2001

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References

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