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Boron Doped A-Si,C:H Grown by Reactive Magnetron Sputtering from Doped Targets

Published online by Cambridge University Press:  16 February 2011

Y.H. Liang ,
S.-Y. Yang ,
A. Nuruddin  and
J.R. Abelson
Y.H. Liang
Affiliation:
Coordinated Science Laboratory and Department of Materials, Science and Engineering, University of Illinois Urbana, IL 61801 USA
S.-Y. Yang
Affiliation:
Coordinated Science Laboratory and Department of Materials, Science and Engineering, University of Illinois Urbana, IL 61801 USA
A. Nuruddin
Affiliation:
Coordinated Science Laboratory and Department of Materials, Science and Engineering, University of Illinois Urbana, IL 61801 USA
J.R. Abelson
Affiliation:
Coordinated Science Laboratory and Department of Materials, Science and Engineering, University of Illinois Urbana, IL 61801 USA
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Abstract

We have deposited p+ a-Si,C:H films by reactive magnetron sputtering from boron doped target with 1 at.% B. We have investigated the influence of H2 pressure on the electrical and microstructural properties of the doped a-Si,C:H films. The boron concentration in the film is ∼2–4×1020cm−3. The incorporation of B atoms decreases by a factor of 2 at the highest H2 pressure. We have obtained films of Taue bandgap ∼1.8–1.84eV with dark conductivity 2–8×10− 6Ω−1cm−1, thermal activation energy ∼0.28–0.33eV and νμτe ∼1–3×10−8cm2/V. This result is comparable with glow discharge B doped a-Si,C:H film. We discuss the film Microstructure, as reflected in infra-red & thermal H evolution spectra, vs. the absolute composition of sputtered boron doped a-Si,C:H films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 589
Copyright
Copyright © Materials Research Society 1994

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References

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