Hostname: page-component-745bb68f8f-5r2nc Total loading time: 0 Render date: 2025-01-29T23:43:32.671Z Has data issue: false hasContentIssue false
  • English
  • Français

Bottom Electrodes for High Dielectric Oxide Compounds: Effects on Crystallization of Lead Containing Ferroelectrics

Published online by Cambridge University Press:  21 February 2011

A. Grill ,
D. Beach ,
C. Smart  and
W. Kane
A. Grill
Affiliation:
IBM-Research Division, T.J.Watson Research Center, Yorktown Heights, N.Y. 10598
D. Beach
Affiliation:
IBM-Research Division, T.J.Watson Research Center, Yorktown Heights, N.Y. 10598
C. Smart
Affiliation:
IBM-Research Division, T.J.Watson Research Center, Yorktown Heights, N.Y. 10598
W. Kane
Affiliation:
IBM-Research Division, T.J.Watson Research Center, Yorktown Heights, N.Y. 10598
Get access

Abstract

Several conductive structures, which appeared to be usable as base electrodes for integrated devices based on high dielectric materials, have been annealed for 30 minutes in oxygen at 650 °C. Similar structures coated with lead-based ferroelectrics deposited by the sol-gel method have been annealed for 1 min in oxygen at higher temperatures. The materials have been characterized by Rutherford backscattering (RBS) and scanning electron microscopy (SEM) and the crystallographic structure of the ferroelectrics films has been determined by X-ray diffractometry (XRD).

Only RuO2/Ru has been found to be suitable as an electrode, at temperatures not exceeding 650 °C. It has also been found that the electrode materials can strongly affect the crystallization behavior of the sol-gel ferroelectric films and the formation of single-phase perovskite layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 310: Symposium N – Ferroelectric Thin Films III , 1993 , 189
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Okuyama, M. and Hamakawa, Y., International Journal of Engineering Science 29 (1991) 391–400.CrossRefGoogle Scholar
2 Haertling, G. H., J.Vac.Sci.Technol. A 9 (1991) 414.CrossRefGoogle Scholar
3 Koyama, K., Sakuma, T., Yamamichi, S., Watanabe, H., Aoki, H., Ohya, S., Miyasaka, Y. and Kikkawa, T., IEEE IEDM 91 91 (1991) 823.Google Scholar
4 Sayer, M., in IEEE Ultrasonics '91 Symposium Lake Buena Vista, FL, Dec. 8-11, 1991.Google Scholar
5 Hren, P. D., Rou, S. H., A. S. H., , Ameen, M., Auciello, O. and Kingon, A., Ferroelectrics 116 (1991).Google Scholar
6 Bruchhaus, R., Pitzer, D., Eibl, O., Scheithauer, U. and Hoesler, W., in Ferroelectric Thin Films II, 1991 Mat.Res.Soc.Symp.Proc., edited by Kingon, A. I., Myers, E. R., and Tuttle, B. (Mat.Res.Soc., Pittsburg, PA, 1992), Vol. 243, p. 123.Google Scholar
7 Desu, S. B. and Yoo, I. K., in Proceedings ISIF-4, March 1992, Monterey, CA..Google Scholar
8 Ogawa, T., Integrated Ferroel. 1 (1992) 1.CrossRefGoogle Scholar
9 Yamamichi, S., Sakuma, T., Takemura, K. and Miyasaka, Y., Jap.J.Appl.Phys. 30 (1991) 2193.CrossRefGoogle Scholar
10 Grill, A., Kane, W., Viggiano, I., Brady, M. and Laibowitz, R., J.Mater.Res. 7 (1992) 3260.CrossRefGoogle Scholar
11 Francis, L. F. and Payne, D. A., J.Am.Ceram.Soc. 74 (1991) 3000.CrossRefGoogle Scholar