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The Burstein-Moss Shift in Quantum Dots of III-V, II-VI and IV-VI Semiconductors Under Parallel Magnetic Field

Published online by Cambridge University Press:  10 February 2011

Kamakhya P. Ghatak ,
P. K. Bose  and
Gautam Majumder
Kamakhya P. Ghatak
Affiliation:
Department of Electronic Science, University of Calcutta, University College of Science and Technology 92, Acharya Prafulla Chandra Road, Calcutta-700 009, INDIA.
P. K. Bose
Affiliation:
Department of Mechanical Engineering, Faculty of Engineering and Technology, Jadavpur University, Calcutta-700 032, INDIA
Gautam Majumder
Affiliation:
Department of Mechanical Engineering, Faculty of Engineering and Technology, Jadavpur University, Calcutta-700 032, INDIA
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Abstract

In this paper, we have investigated the Burstein-Moss shift(BMS) in QDs of III-V, II-VI and IV-VI semiconductors in the presence of a parallel magnetic field on the basis of newly formulated carrier disperson laws. It is found, taking QDs of InSb, Cds and CdTe as examples that the BMS increases with increasing doping and decreasing film thickness in ladder like manners. The numerical values of the BMS in QDs are much greater than that of their corresponding values for bulk specimens. The theoretical results as presented here are in agreement with the experimental observations as reported in literature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 484: Symposium F – Infrared Applications of Semiconductors II , 1997 , 673
Copyright
Copyright © Materials Research Society 1998

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