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¼c Silicon Thin Films Deposited by Remote Plasma Enhanced Chemical Vapor Deposition Process

Published online by Cambridge University Press:  25 February 2011

C. Wang ,
G. N. Parsons ,
S. S. Kim ,
E. C. Buehler ,
R. J. Nemanich  and
G Lucovsky
C. Wang
Affiliation:
Department of Physics, and Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-8202
G. N. Parsons
Affiliation:
Department of Physics, and Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-8202
S. S. Kim
Affiliation:
Department of Physics, and Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-8202
E. C. Buehler
Affiliation:
Department of Physics, and Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-8202
R. J. Nemanich
Affiliation:
Department of Physics, and Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-8202
G Lucovsky
Affiliation:
Department of Physics, and Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-8202
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Abstract

In an earlier study, we deposited ¼c-Si thin films by reactive magnetron sputtering (RMS). Here we extend our studies to the deposition of both undoped and high conductivity N-type and P-type ¼c-Si thin films by a remote PECVD. We show that ¼c-Si films can be deposited by bringing hydrogen, H2, into the source gas mixtures. The H2 could introduced by either upstream in a He/H2 mixture and directly plasma excited, or downstream, and be remotely excited along with the silane, SiH4, feed gas. The degree of crystallinity is shown to depend on the hydrogen dilution, the substrate temperature and the substrate material.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990 , 535
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

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