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Calculations on Multi-Pulse, Laser-Induced Diffusion and Evaporation Loss of Arsenic and Boron in Silicon

Published online by Cambridge University Press:  25 February 2011

H.S. Tan  and
C.K. Ong
H.S. Tan
Affiliation:
Department of Physics, National University of Singapore, Kent Ridge, Singapore0511
C.K. Ong
Affiliation:
Department of Physics, National University of Singapore, Kent Ridge, Singapore0511
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Abstract

A dopant redistribution model that has the dopant diffusion equation partially solved analytically before engaging numerical method in its final solution was formulated. The model which included an evaporation loss mechanism for the near-surface dopants was then employed in the theoretical fitting of the measured As and ? redistributed profiles in Si due to single and ten-pulse laser irradiations. All the dopant profiles computed were in good agreement with the measured SIMS data. The values of dopant diffusion coefficients Dℓ in liquid Si that were deduced presently from the dopant profile fitting were (3.2 00B1 0.3) × 10-4-cm2s-1 for As and (4.0 00B1 0.4) × 10-4-cm2s-1 for ? respectively. Comparison to the reported experimental values of Dℓ was also made.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 35: Symposium A – Energy Beam-Solid Interactions and Transient Thermal Processing/1984 , 1984 , 245
Copyright
Copyright © Materials Research Society 1985

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References

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