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Capacitance Spectroscopy of n-i-n and p-i-p GaAs Sandwich Structures with Nanoscale As Clusters in the i-Layers

Published online by Cambridge University Press:  17 March 2011

V.V. Chaldyshev ,
P.N. Brunkov ,
A. V. Chernigovskii ,
A. Moskalenko ,
N.A. Bert ,
S. G. Konnikov ,
V. V. Preobrazhenskii ,
M. A. Putyato  and
B. R. Semyagin
V.V. Chaldyshev
Affiliation:
Ioffe Physico-Technical Institute, 26 Politekhnicheskaya Str., 194021 St.Petersburg, Russia.
P.N. Brunkov
Affiliation:
Ioffe Physico-Technical Institute, 26 Politekhnicheskaya Str., 194021 St.Petersburg, Russia.
A. V. Chernigovskii
Affiliation:
Ioffe Physico-Technical Institute, 26 Politekhnicheskaya Str., 194021 St.Petersburg, Russia.
A. Moskalenko
Affiliation:
Ioffe Physico-Technical Institute, 26 Politekhnicheskaya Str., 194021 St.Petersburg, Russia.
N.A. Bert
Affiliation:
Ioffe Physico-Technical Institute, 26 Politekhnicheskaya Str., 194021 St.Petersburg, Russia.
S. G. Konnikov
Affiliation:
Ioffe Physico-Technical Institute, 26 Politekhnicheskaya Str., 194021 St.Petersburg, Russia.
V. V. Preobrazhenskii
Affiliation:
Institute of Semiconductor Physics, 13 Lavrentiev Ave., 630090 Novosibirsk, Russia.
M. A. Putyato
Affiliation:
Institute of Semiconductor Physics, 13 Lavrentiev Ave., 630090 Novosibirsk, Russia.
B. R. Semyagin
Affiliation:
Institute of Semiconductor Physics, 13 Lavrentiev Ave., 630090 Novosibirsk, Russia.
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Abstract

Accumulation of electrons and holes in GaAs layers, that contained As clusters and were sandwiched between n- and p-type buffer GaAs layers, was revealed by capacitance-voltage measurements. As a result of majority-carrier accumulation, expansive depletion regions are formed in the adjoining buffer layers. Simulation of the capacitance-voltage characteristics, based on a numerical solution of the Poisson equation, shows that the accumulated charge density is ∼1 × 1012 cm−2, which is comparable with the concentration of As nanoclusters determined by transmission electron microscopy. The levels where the electrons or holes are accumulated lie close but above the GaAs midgap. A strong difference in the emission rates of the accumulated electrons and holes has been revealed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 699: Symposium R – Electrically Based Microstructural Characterization III , 2001 , R4.6
Copyright
Copyright © Materials Research Society 2002

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