Hostname: page-component-745bb68f8f-v2bm5 Total loading time: 0 Render date: 2025-01-15T07:16:19.302Z Has data issue: false hasContentIssue false
  • English
  • Français

Carbon Local Bonding Configurations in Amorphous Hydrogenated Silicon-Carbon Alloys

Published online by Cambridge University Press:  26 February 2011

Mark A. Petrich  and
Jeffrey A. Reimer
Mark A. Petrich
Affiliation:
Department of Chemical Engineering, University of California, Berkeley, CA 94720-9989.
Jeffrey A. Reimer
Affiliation:
Department of Chemical Engineering, University of California, Berkeley, CA 94720-9989.
Get access

Abstract

We present the results of a carbon-13 nuclear magnetic resonance (NMR) study of well-characterized thin films of amorphous hydrogenated silicon carbide. The NMR data detail the distribution of carbon local bonding configurations in films which have carbon-to-silicon ratios less than one. In particular, we show data which clearly identify and quantify non-hydrogenated sp2, or unsaturated, carbon bonding environments.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 95: Symposium E – Amorphous Silicon Semiconductors--Pure and Hydrogenated , 1987 , 329
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Carlson, D.E., J.Vac.Sci.Technol. 20, 290 (1982).Google Scholar
2. Tawada, Y., Tsuge, K., Kondo, M., Okamoto, H., and Hamakawa, Y., J.Appl.Phys. 53, 5273 (1982).Google Scholar
3. Bullot, J., Gauthier, M., Schmidt, M., Catherine, Y., and Zamouche, A., Phil.Mag.B 49, 489 (1984).Google Scholar
4. Mahan, A.H., von Roedem, B., Williamson, D.L., and Madan, A., J.Appl.Phys. 57, 2717 (1985).Google Scholar
5. Tafto, J. and Kampas, F.J., Appl.Phys.Lett. 46, 949 (1985).Google Scholar
6. Taylor, P.C., in Semiconductors and Semimetals, Vol.21C, Pankove, Jacques I. ed., pp. 99–154, Academic Press, New York, 1984.Google Scholar
7. Kaplan, S. and Dilks, A., Thin Solid Films 84, 419 (1981).Google Scholar
8. Morimoto, Akiharu, Miura, Takashi, Kumeda, Minoru, Shimizu, Tatsuo, Jap. J. Appl. Phys. 21, L119 (1982).Google Scholar
9. Tauc, J., Amorphous and Liquid Semiconductors, Chapter 4, Plenum Press, New York, 1974.Google Scholar
10. Reimer, J.A., Vaughan, R.W., and Knights, J.C., Phys.Rev.Lett. 44, 193 (1980).Google Scholar
11. Nakazawa, Kenji, Ueda, Shoichi, Kumeda, Minoru, Morimoto, Akiharu, Shimizu, Tatsuo, Jap. J. Appl. Phys. 21, L176 (1982).Google Scholar
12. Lindon, J.C. and Ferrige, A.G., in Progress in NMR Spectroscopy, Vol.14, p. 29, 1980.Google Scholar
13. Gerstein, B.C. and Dybowski, C.R., Transient Techniques in NMR of Solids, pp. 234–239, Academic Press, New York, 1985.Google Scholar
14. Andrew, E.R., in Progress in NMR Spectroscopy, Vol.8, pp. 1–40, 1972.Google Scholar
15. Duncan, T.M., J.Phys.Chem.Reference Data (to be published).Google Scholar
16. Gordon Finlay, R., Hartman, J. Stephen, Richardson, Mary F., and Barbara Williams, L., J.Chem.Soc.,Chem.Commun., 159 (1985).Google Scholar
17. Brook, A.G., Safa, K.D., Lickiss, P., and Baines, K.M., J.Am.Chem.Soc. 107, 4338 (1985).Google Scholar
18. Baum, J., Gleason, K.K., Pines, A., Garroway, A.N., Reimer, J.A., Phys.Rev.Lett. 56, 1377 (1986).Google Scholar
19. Partlow, W.D. and Kline, L.E., in Mat.Res.Soc.Symp.Proc., Vol. 68, edited by Coburn, J.W., Gottscho, R.A., and Hess, D.W., p. 309 (1986).Google Scholar
20. Wagner, J., Wild, Ch., Bubenzer, A., and Koidl, P., in Mat.Res.Soc.Symp.Proc., Vol. 68, edited by Coburn, J.W., Gottscho, R.A., and Hess, D.W., p. 309 (1986), p.205.Google Scholar
21. Petrich, Mark A. and Reimer, Jeffrey A., to be published.Google Scholar