Hostname: page-component-6bf8c574d5-2jptb Total loading time: 0 Render date: 2025-02-22T16:42:53.068Z Has data issue: false hasContentIssue false
  • English
  • Français

Carbonization Dynamics of Silicon Surfaces By Hydrocarbon Gas Molecular Beams

Published online by Cambridge University Press:  22 February 2011

Tatsuo Yoshinobu ,
Takashi Fuyuki  and
Hiroyuki Matsunami
Tatsuo Yoshinobu
Affiliation:
Kyoto University, Dept. of Electrical Engineering, Yoshidahonmachi, Sakyo, Kyoto 606–01, Japan
Takashi Fuyuki
Affiliation:
Kyoto University, Dept. of Electrical Engineering, Yoshidahonmachi, Sakyo, Kyoto 606–01, Japan
Hiroyuki Matsunami
Affiliation:
Kyoto University, Dept. of Electrical Engineering, Yoshidahonmachi, Sakyo, Kyoto 606–01, Japan
Get access

Abstract

Carbonization dynamics of Si surfaces using a hydrocarbon gas molecular beam was investigated. In case of carbonizing atomically clean Si surfaces with C2H2, single crystalline 3C-SiC layers were obtained only In the narrow range of a substrate temperature near 780 °C. Control of surface reaction by a cap of very thin surface oxide layer and gradual increase of substrate temperature during carbonization were found to be effective in forming single crystalline 3C-SiC layers reproducibly.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 220: Symposium B – Silicon Molecular Beam Epitaxy , 1991 , 575
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Matsunami, H., Nishino, S. and Ono, H.: IEEE Trans. Electron Devices ED-28 (1981) 1235.CrossRefGoogle Scholar
[2] Nishino, S., Powell, J. A. and Will, H. A.: Appl. Phys. Lett. 42 (1983) 460.CrossRefGoogle Scholar
[3] Fuyuki, T., Nakayama, M., Yoshinobu, T., Shiomi, H. and Matsunami, H.: J. Cryst. Growth 95 (1989) 461.CrossRefGoogle Scholar
[4] Yoshinobu, T., Nakayama, M., Shiomi, H., Fuyuki, T. and Matsunami, H.: J. Cryst. Growth 99 (1990) 520.CrossRefGoogle Scholar
[5] Khan, I. H. and Summergrad, R. N.: Appl. Phys. Lett. 11 (1967) 12.CrossRefGoogle Scholar
[6] Haq, K. E. and Learn, A. J.: J. Appl. Phys. 40 (1969) 431.CrossRefGoogle Scholar
[7] Mogab, C. J. and Leamy, H. J.: J. Appl. Phys. 45 (1974) 1075.CrossRefGoogle Scholar
[8] Yoshinobu, T., Fuyuki, T. and Matsunami, H.: Jpn. J. Appl. Phys. to be published.Google Scholar