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Carrier Transport and Recombination In A-SI:H P-I-N Solar Cells in Dark and Under Illumination

Published online by Cambridge University Press:  01 February 2011

J. Deng ,
J.M. Pearce ,
V. Vlahos ,
R.J. Koval ,
R.W. Collins  and
C.R. Wronski
J. Deng
Affiliation:
Center for Thin Film Devices, the Pennsylvania State University, University Park, PA 16802
J.M. Pearce
Affiliation:
Center for Thin Film Devices, the Pennsylvania State University, University Park, PA 16802
V. Vlahos
Affiliation:
Center for Thin Film Devices, the Pennsylvania State University, University Park, PA 16802
R.J. Koval
Affiliation:
Currently at Intel Corp., 2200 Mission College Blvd., Santa Clara, CA 95054
R.W. Collins
Affiliation:
Center for Thin Film Devices, the Pennsylvania State University, University Park, PA 16802
C.R. Wronski
Affiliation:
Center for Thin Film Devices, the Pennsylvania State University, University Park, PA 16802
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Abstract

A study has been carried out on the forward bias dark current and the short circuit current -open circuit voltage characteristics of a-Si:H p-i-n solar cells over wide range of illumination intensities. Results are presented with superposition of these characteristics over extended current voltage regimes. This and the observed separation between these characteristics are consistent with the arguments presented based on first principle arguments. The conclusions drawn about the role of photo-generated carrier lifetimes, the densities of defects and the potential barriers in the i-layers adjacent to the n and p contacts are confirmed by numerical simulations. The key role of these potential barriers to the split in the characteristics offer new insight into both why the lack of superposition has been observed and the erroneous conclusions drawn about carrier transport for a-Si:H solar cells in the dark and under illumination.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 762: Symposium A – Amorphous and Nanocrystalline Silicon-Based Films – 2003 , 2003 , A3.4
Copyright
Copyright © Materials Research Society 2003

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