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Cathodoluminescence of Ingaas-GaAs Single Heterostructures

Published online by Cambridge University Press:  26 February 2011

E.A. Fitzgerald ,
K.L. Kavanagh ,
D.G Ast ,
P.D. Kirchner ,
G.D. Pettit  and
J.M. Woodall
E.A. Fitzgerald
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY
K.L. Kavanagh
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY
D.G Ast
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY
P.D. Kirchner
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, NY
G.D. Pettit
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, NY
J.M. Woodall
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, NY
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Abstract

Mismatched InGaAs-GaAs epitaxial layers were grown by molecular beam epitaxy (MBE) on substrates containing 9800 or <100 dislocations/cm2. Cathodoluminescence (CL), transmission electron microscopy (TEM), Rutherford backscattering spectroscopy (RBS), and energy dispersive x-ray analysis (EDX) were used to analyze the effect of mismatch and substrate dislocation density on interface morphology. Surface ridges in scanning electron microscopy (SEM) images were found to correlate with areas of high recombination in CL. The spacing of dark recombination lines seen in CL was found to be an order of magnitude larger than the spacing of misfit dislocations seen in TEM. CL/IEM correlation reveals that some areas of the misfit array act more strongly as recombination centers than others. CL of step etched samples show that interface defects propagate into the GaAs buffer layer to depths of 4000 Å below the interface. The substrate dislocation density does not have a major effect on the number or spacing of the dark recombination lines.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 82: Symposium I – Characterization of Defects in Materials , 1986 , 367
Copyright
Copyright © Materials Research Society 1987

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References

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