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Cathodoluminescence Study of Gadolinium–Doped Yttrium Oxide Thin Films Deposited By Radio–Frequency Magnetron Sputtering

Published online by Cambridge University Press:  01 February 2011

J. D. Fowlkes ,
P. D. Rack ,
R. Bansal  and
J.M. Fitz–Gerald
J. D. Fowlkes
Affiliation:
Dept. of Materials Science and Engineering, The University of Tennessee, Knoxville, TN 37996 - 2200
P. D. Rack
Affiliation:
Dept. of Materials Science and Engineering, The University of Tennessee, Knoxville, TN 37996 - 2200
R. Bansal
Affiliation:
Dept. of Materials Science and Engineering, The University of Virginia, Charlottesville, VA 22904-4745
J.M. Fitz–Gerald
Affiliation:
Dept. of Materials Science and Engineering, The University of Virginia, Charlottesville, VA 22904-4745
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Abstract

A multi–layer gadolinium–doped yttrium oxide thin film was deposited in a combinatorial fashion on a Si (001) substrate using radio–frequency magnetron sputtering. Alternating layers of Y2O3 and Gd were deposited for a total of 9 layers. The film was homogenized in composition by an 850°C 12 hour thermal treatment producing a range of composition from Y1.96Gd0.04O3-Y1.54Gd0.46O3 in a single film. Ultraviolet emission with a peak wavelength at 314-315nm was observed from the gadolinium 8S7/2 - 6P7/2 transition via cathodoluminescence (CL) excitation. The CL–induced intensity was found to be maximum at 9 at% Gd (Y1.82Gd0.18O3) and an optimized electron probe of Vacc = 13 keV was determined for the 1 μm thick thin film. Gadolinium activator saturation was observed for sample current density greater than 0.03 μA/cm2. Non- radiative decay via thermal pathways is suspected for the observed activator saturation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 764: Symposium C – New Applications for Wide-Bandgap Semiconductors , 2003 , C7.12
Copyright
Copyright © Materials Research Society 2003

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