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Challenges in Interface Trap Characterization of Deep Sub-Micron MOS Devices Using Charge Pumping Techniques

Published online by Cambridge University Press:  10 February 2011

J.L. Autran ,
P. Masson  and
G. Ghibaudo
J.L. Autran
Affiliation:
Laboratoire de Physique de la Matière (LPM), UMR CNRS 5511, Institut National des Science Appliquées de Lyon, 20, avenue A. Einstein, F-69621 Villeurbanne Cedex, France, autran@insa-lyon.fr Centre de Projets en Microèlectronique Avancée (CPMA), CEA/Leti, 38054 Grenoble Cedex, France
P. Masson
Affiliation:
Laboratoire de Physique de la Matière (LPM), UMR CNRS 5511, Institut National des Science Appliquées de Lyon, 20, avenue A. Einstein, F-69621 Villeurbanne Cedex, France, autran@insa-lyon.fr Laboratoire de Physique des Composants à Semi-conducteurs (LPCS), UMR CNRS 5531, ENSERG, 23 rue des Martyrs, 38016 Grenoble Cedex 1, France Centre de Projets en Microèlectronique Avancée (CPMA), CEA/Leti, 38054 Grenoble Cedex, France
G. Ghibaudo
Affiliation:
Laboratoire de Physique des Composants à Semi-conducteurs (LPCS), UMR CNRS 5531, ENSERG, 23 rue des Martyrs, 38016 Grenoble Cedex 1, France Centre de Projets en Microèlectronique Avancée (CPMA), CEA/Leti, 38054 Grenoble Cedex, France
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Abstract

This work surveys some of our recent experimental and theoretical advances in charge pumping for the electrical characterization of interface traps present in MOSFET architectures. The first part of this paper is devoted to an improved time-domain analysis of the charge pumping phenomenon. This approach presents the main advantage to use the same formalism to describe the charge pumping contribution of a single trap or a continuum of traps at the Si-SiO2 interface. The implications for deepsubmicron MOSFET characterization are illustrated. Some experimental aspects are then presented, including the adaptation of the technique to ultra-thin oxides, non-planar oxides and DRAM memory cells. Finally, recent charge pumping characterization results are reported concerning the electrical behavior of the Si-SiO2 interface submitted to particular technological treatments, electrical and radiation stresses, or post-degradation anneals.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 592 , 1999 , 275
Copyright
Copyright © Materials Research Society 2000

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References

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