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Changes of Drift Mobility in a-Si:H with Light Exposure and Doping

Published online by Cambridge University Press:  26 February 2011

J. Takada  and
H. Fritzsche
J. Takada
Affiliation:
James Franck Institute, The University of Chicago, Chicago, IL 60637
H. Fritzsche
Affiliation:
James Franck Institute, The University of Chicago, Chicago, IL 60637
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Abstract

Measurements of the drift mobility μ of photo-excited electrons in n-type hydrogenated amorphous silicon (a-Si:H) as a function of light intensity are reported. The value of μ increases as the quasi Fermi level is moved closer to the transport states in accordance with the multiple trapping theory. The drift mobility decreases with increasing doping as well as with an increase in the concentration of metastable dangling bonds defects by strong light exposures. This decrease in μ between 300 and 360K can be explained by a corresponding decrease in the microscopic mobility, by an increase in the density of tail states within 0.35eV below the electron mobility edge, or by a combination of both these effects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 95: Symposium E – Amorphous Silicon Semiconductors--Pure and Hydrogenated , 1987 , 571
Copyright
Copyright © Materials Research Society 1987

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