Hostname: page-component-6bf8c574d5-gr6zb Total loading time: 0 Render date: 2025-02-22T23:34:07.675Z Has data issue: false hasContentIssue false
  • English
  • Français

Channel Engineering of SiGe-Based Heterostructures for High Mobility MOSFETs

Published online by Cambridge University Press:  15 March 2011

Christopher W. Leitz ,
Matthew T. Currie ,
Minjoo L. Lee ,
Zhi-Yuan Cheng ,
Dimitri. A. Antoniadis  and
Eugene A. Fitzgerald
Christopher W. Leitz
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology Cambridge, MA 02139
Matthew T. Currie
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology Cambridge, MA 02139
Minjoo L. Lee
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology Cambridge, MA 02139
Zhi-Yuan Cheng
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology Cambridge, MA 02139
Dimitri. A. Antoniadis
Affiliation:
Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology Cambridge, MA 02139
Eugene A. Fitzgerald
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology Cambridge, MA 02139
Get access

Abstract

Strained Si- and SiGe-based heterostructure metal-oxide-semiconductor field-effect transistors (MOSFETs) grown on relaxed SiGe virtual substrates exhibit dramatic electron and hole mobility enhancements over bulk Si, making them promising candidates for next generation complementary MOSFET (CMOS) devices. The most heavily investigated heterostructures consist of single strained Si layers grown upon relaxed SiGe substrates. While this configuration offers significant performance gains for both n- and p-MOSFETs, the enhanced hole mobility remains much lower than the enhanced electron mobility. By contrast, a combination of buried compressively strained Si1−yGey layers and tensile strained Si surface layers grown on relaxed Si1−xGex (x < y), hereafter referred to as dual channel heterostructures, offers nearly symmetric electron and hole mobilities without compromising n-MOSFET device performance. To investigate these heterostructures, we study the effects of alloy scattering on channel mobility in long channel MOSFETs. By using the combination of a buried Si0.2Ge0.8 channel and a strained Si surface channel grown on a relaxed Si0.5Ge0.5 virtual substrate, we have achieved nearly symmetric electron and hole mobility in the same heterostructure. By employing different virtual substrate compositions, we can decouple the effects of strain and alloy scattering in both tensile strained surface channels and compressively strained buried channels. We show that significant hole mobility enhancements can be achieved in dual channel heterostructures, even for buried channel compositions where alloy scattering is expected to be most severe. Furthermore, we show that alloy scattering in tensile strained SiGe surface channels impacts electrons much more severely than holes. Taken together, these results demonstrate that dual channel heterostructures can offer symmetric carrier mobilities and provide excellent performance gains for CMOS applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 686: Symposium A – Materials Issues in Novel Si-Based Technology , 2001 , A3.10
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Fitzgerald, E.A., Xie, Y.-H., Green, M.L. et al. , Appl. Phys. Lett. 59, 811 (1991).Google Scholar
2. Fitzgerald, E.A., Xie, Y.-H., Monroe, D. et al. , J. Vac. Sci. Tech. B 10, 1807 (1992).Google Scholar
3. Welser, J., Hoyt, J.L., and Gibbons, J.F., IEEE Elect. Dev. Lett. 15 (3), 100 (1994).Google Scholar
4. Currie, M.T., Leitz, C.W., Langdo, T.A. et al. , submitted to J. Vac. Sci.Tech. B (2001).Google Scholar
5. Ismail, K., Chu, J.O., and Meyerson, B.S., Appl. Phys. Lett. 64 (23), 3124 (1994).Google Scholar
6. Höck, G., Glück, M., Hackbarth, T. et al. , Thin Solid Films 336, 141 (1998).Google Scholar
7. Höck, G., Hackbarth, T., Erben, U. et al. , Elect. Lett. 34 (19), 1888 (1998).Google Scholar
8. Xie, Y.-H., Monroe, D., Fitzgerald, E.A. et al. , Appl. Phys. Lett. 63, 2263 (1993).Google Scholar
9. Armstrong, M.A., Ph.D. Thesis, MIT, 1999.Google Scholar
10. Höck, G., Kohn, E., Rosenblad, C. et al. , Appl. Phys. Lett. 76 (26), 3920 (2000).Google Scholar
11. Lee, M.L., Leitz, C.W., Cheng, Z. et al. , Appl. Phys. Lett. 79, 3344 (2001).Google Scholar
12. Fitzgerald, E.A., Kim, A.Y., Currie, M.T. et al. , Mater. Sci. Eng. B 67, 53 (1999).Google Scholar
13. Leitz, C.W., Currie, M.T., Kim, A.Y. et al. , J. Appl. Phys. 90, 2730 (2001).Google Scholar
14. Cheng, Z-Y., Currie, M.T., Leitz, C.W. et al. , IEEE Elect. Dev. Lett. 22, 321 (2001).Google Scholar
15. Fischetti, M.V. and Laux, S.E., J. Appl. Phys. 80, 2234 (1996).Google Scholar
16. Kearney, M.J. and Horrell, A.I., Semicond. Sci. Tech. 13, 174 (1998).Google Scholar
17. Schäffler, F., Semicond. Sci. Tech. 12, 1515 (1997).Google Scholar
18. Bouillon, P., Skotnicki, T., Kelaidis, C. et al. , IEDM Tech. Dig., 559 (1996).Google Scholar
19. Bufler, F.M. and Meinerzhagen, B., J. Appl. Phys. 84 (10), 5597 (1998).Google Scholar