Hostname: page-component-78c5997874-m6dg7 Total loading time: 0 Render date: 2024-11-14T06:17:15.411Z Has data issue: false hasContentIssue false
  • English
  • Français

Characteristics of Organic Memory Using Metal Oxide Nano-clusters

Published online by Cambridge University Press:  01 February 2011

You-Wei Cheng ,
Tzu-Yueh Chang  and
Po-Tsung Lee
You-Wei Cheng
Affiliation:
s9715512.di97g@g2.nctu.edu.tw, National Chiao Tung University, Department of Photonics & Display Institute, Hsinchu, Taiwan, Province of China
Tzu-Yueh Chang
Affiliation:
lanceral0217@hotmail.com, National Chiao Tung University, Department of Photonics & Institute of Electro-Optical Engineering, hsinchu, Taiwan, Province of China
Po-Tsung Lee
Affiliation:
potsung@mail.NCTU.edu.tw, National Chiao Tung University, Department of Photonics & Institute of Electro-Optical Engineering, hsinchu, Taiwan, Province of China
Get access

Abstract

In this report, electrical properties of an organic memory device with a tri-layer structure, MoO3 nano-clusters layer sandwiched between Alq3 thin films, are investigated. The device using this kind of structure exhibits a large ON/OFF density current ratio over 104, long retention time over 1hr, and an electrically programmable character. The formation of the bistable resistance switching of the device originates from a charge trapping effect of the MoO3 nano-clusters layer. Moreover, current density-voltage (J-V) characteristics of the device are quite different from those of OBDs using MoO3 nano-particles. No negative differential resistance is observed in the J-V curve of the device. This may be due to the distinct surface morphology of the MoO3 layer on the Alq3 thin film.

Keywords

organicmorphologymemory
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1250: Symposium G – Materials and Physics for Nonvolatile Memories II , 2010 , 1250-G17-03
Copyright
Copyright © Materials Research Society 2010

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Ma, L. P. Liu, J. and Yang, Y. “Organic electrical bistable devices and rewritable memory cells,” Appl. Phys. Lett., vol. 80, pp. 2997–2999 (2002).Google Scholar
2 Bozano, L. D. Kean, B. W. Deline, V. R. Salem, J. R. and Scott, J. C. “Mechanism for bistability in organic memory elements,” Appl. Phys. Lett., vol. 84, pp. 607–609 (2004).10.1063/1.1643547Google Scholar
3 Bozano, L. D. Kean, B. W. Beinhoff, M. Carter, K. R. Rice, P. M. and Scott, J. C. “Organic materi materials and thin als thin-film structures for cross cross-point memory cells based on trapping in metallic n nanoparticles,” Adv. Funct. Mater., vol. 15, pp. 1933–1939 (2005).10.1002/adfm.200500130Google Scholar
4 Ouyang, J. Chu, C. C.-W. Szmanda, C. R. Ma, L. and Yang, Y. “Programmable polymer thin film and non non-volatile memory device, device,” Nature Mater., vol. 3, pp. 918–922 (2004).Google Scholar
5 Ouyang, J. Chu, C. C.-W. Sieves, D. and Yang, Y. “Electric Electric-field field-induced charge transfer between gold nanoparticle and capping 2 2-naphthalenethiol and organic memory cells,” Appl. Phy Phys. Lett., vol. 86, pp. 123507 (2005).10.1063/1.1887819Google Scholar
6 Tseng, R. J. Huang, J. Ouyang, J. Kaner, R. B. Ka, and Yang, Y. “Polyaniline nanofiber/gold ner, nanoparticle nonvolatile memory,” Nano Lett., vol. 5, pp. 1077–1080 (2005).10.1021/nl050587lGoogle Scholar
7 Yook, K. S. Jeon, S. O. Joo, C. W. Lee, J. Y. Kim, S. H. and Jang, J. “Organic bistable memory device using MoO3 nanocrystal as a charge trapping center,” Org. Electron., vol. 10, pp. 48–52 (2009).10.1016/j.orgel.2008.10.002Google Scholar
8 Xie, G. Meng, Y. Wu, F. Tao, C. Zhang, D. Liu, M. Xue, Q. Chen, W. and Zhao, Y. “Very, low turn turn-on voltage and high brightness tris (8-hydroxyquinoline) aluminum aluminum-based organic light-emitting diodes with a MoOx p-doping layer,” Appl. Phys. Lett., vol. 92, pp. 093305 (2008).10.1063/1.2890490Google Scholar