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Characteristics of Y2O3 films on Si(100) by ionized cluster beam deposition

Published online by Cambridge University Press:  15 February 2011

M. H. Cho ,
S. W. Whangbo ,
C. N. Whang ,
S. C. Choi ,
S. B. Kang ,
S. I. Lee  and
M. Y. Lee
M. H. Cho
Affiliation:
Department of Physics, Yonsei University, Seoul 120–749, Korea.
S. W. Whangbo
Affiliation:
Department of Physics, Yonsei University, Seoul 120–749, Korea.
C. N. Whang
Affiliation:
Department of Physics, Yonsei University, Seoul 120–749, Korea.
S. C. Choi
Affiliation:
Korea Institute of Science and Technology, Ceramics Division, Seoul 130–650, Korea.
S. B. Kang
Affiliation:
Semiconductor Research Center, Samsung Electronics Co., Ltd, Suwon 440–660, Korea.
S. I. Lee
Affiliation:
Semiconductor Research Center, Samsung Electronics Co., Ltd, Suwon 440–660, Korea.
M. Y. Lee
Affiliation:
Semiconductor Research Center, Samsung Electronics Co., Ltd, Suwon 440–660, Korea.
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Abstract

In this study, the Y2O3 films on p-type Si(100) have been fabricated by UHV reactive ionized cluster beam deposition(r-ICB) systems. The crystallinity of the films was investigated by glancing X-ray diffraction(GXRD) and in-situ reflection of high energy electron diffraction(RHEED) analyses. The results show that the preferentially oriented crystallinity of the films was increased with acceleration voltages as well as substrate temperatures. Especially, at the substrate temperature of 700 °C and the acceleration voltage of 5kV, the Y2O3 films grow epitaxially in direction of Y2O3(110)//Si(100). The characteristics of Al/Y2O3/Si MIS structure were obtained by C-V, and I-V measurements. The breakdown field strength of the epitaxially grown films increases up to 2MV/cm without any interface silicon oxide layer, and the dielectric constant is found to be ε=15.6. these results demonstrated that the yttrium oxide films have potential application to the gate insulator of the future VLSI/ULSI devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 474: Symposium L – Epitaxial Oxide Thin Films III , 1997 , 345
Copyright
Copyright © Materials Research Society 1997

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References

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