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Characterization of a Rapid Thermal Annealed TiNxOy/TiSi2 Barrier Layer

Published online by Cambridge University Press:  25 February 2011

Sailesh Chittipeddi ,
Michael J. Kelly ,
Charles M. Dziuba ,
Anthony S. Oates  and
William T. Cochran
Sailesh Chittipeddi
Affiliation:
AT&T Bell Laboratories, 555 Union Boulevard, Allentown, PA 18103
Michael J. Kelly
Affiliation:
AT&T Bell Laboratories, 555 Union Boulevard, Allentown, PA 18103
Charles M. Dziuba
Affiliation:
AT&T Bell Laboratories, 555 Union Boulevard, Allentown, PA 18103
Anthony S. Oates
Affiliation:
AT&T Bell Laboratories, 555 Union Boulevard, Allentown, PA 18103
William T. Cochran
Affiliation:
AT&T Bell Laboratories, 555 Union Boulevard, Allentown, PA 18103
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Abstract

In this paper we characterize the thin film formed by rapid thermal anneal of a magnetron sputtered titanium film in a nitrogen atmosphere. The barrier properties of this material have been characterized for both n- and p-type junctions in our CMOS technology. We have characterized the physical properties of the film using Auger, RBS and TEM analysis in the same range of temperatures, and find that as the annealing temperature is increased a better quality TiNxOy film is formed. The electromigration characteristics for Aℓ/TiNxOy/TiSi2 runners, as well as the role that this system plays in minimizing failures due to stress induced voiding are examined in this study.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 181: Symposium B – Advanced Metallizations in Microelectronics , 1990 , 527
Copyright
Copyright © Materials Research Society 1990

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References

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