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Characterization of bulk crystals of transition metal doped ZnO for spintronic applications

Published online by Cambridge University Press:  01 February 2011

M. H. Kane ,
R. Varatharajan ,
Z. C. Feng ,
S. Kandoor ,
J. Nause ,
C. Summers  and
I. T. Ferguson
M. H. Kane
Affiliation:
Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA
R. Varatharajan
Affiliation:
Cermet, Inc., Atlanta, GA
Z. C. Feng
Affiliation:
Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA
S. Kandoor
Affiliation:
Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA
J. Nause
Affiliation:
Cermet, Inc., Atlanta, GA
C. Summers
Affiliation:
Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA
I. T. Ferguson
Affiliation:
Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA
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Abstract

In this work, we report on the material properties of ZnO doped with Mn, Co, and Fe grown by a modified melt growth technique. X-ray diffraction measurements show that transition metals can be incorporated on Zn sites; an increase in the lattice parameter is apparent with increasing doping level. UV-visible transmission and reflectance measurements have also been performed. Absorption bands in the visible regime are distinctive to the individual transition metal dopants. A noticeable shift in the optical band edge has been observed from these Mn/Co/Fe-doped ZnO crystals in comparison with the undoped material. ZnO may also provide a suitable platform for the incorporation of transition metal elements through high temperature near equilibrium growth processes; however, further work is required in order to employ these materials for spintronic applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 799: Symposium Z – Progress in Compound Semiconductor Materials III - Electronic and Optoelectronic Applications , 2003 , Z8.6
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

[1] Datta, S. and Das, B., Applied Physics Letters 56, 665–667 (1990).Google Scholar
[2] Ohno, Y., Young, D. K., Beschoten, B., Matsukura, F., Ohno, H., and Awschalom, D. D., Nature 402, 790–792 (1999).Google Scholar
[3] Di Vincenzo, D. P., Science 270, 255–261 (1995).Google Scholar
[4] Ohno, H., Shen, A., Matsukura, F., Oiwa, A., Endo, A., Katsumoto, S., and Iye, Y., Applied Physics Letters 69, 363–365 (1996).Google Scholar
[5] Ohno, H., Munekata, H., Penney, T., von Molnar, S., and Chang, L. L., Physical Review Letters 68, 2664–2667 (1992).Google Scholar
[6] Dietl, T., Ohno, H., Matsukura, F., Cibert, J., and Ferrand, D., Science 287, 1019–1022 (2000).Google Scholar
[7] Sato, K. and Katayama-Yoshida, H., Semiconductor Science & Technology 17, 367–76 (2002).Google Scholar
[8] Sato, K. and Katayama-Yoshida, H., Physica B 308–310, 904–907 (2001).Google Scholar
[9] Jin, Z., Fukumura, T., and Kawasaki, M., Applied Physics Letters 78, 3824–6 (2001).Google Scholar
[10] Medvedkin, G. A., Ishibashi, T., Nishi, T., Hayata, K., Hasegawa, Y., and Sato, K., Japanese Journal of Applied Physics 39, L949–L951 (2000).Google Scholar
[11] Cho, S., Choi, S., Cha, G.-B., Hong, S. C., Kim, Y., Zhao, Y.J., Freeman, A. J., Ketterson, J. B., Kim, B. J., Kim, Y. C., and Choi, B.-C., Physical Review Letters 88, 257203 (2002).Google Scholar
[12] Sharma, P., Gupta, A., Rao, K. V., Owens, F. J., Sharma, R., Ahuja, R., Osorio Guillen, J. M., Johansson, B., and Gehring, G. A., Nature Materials 2, 673–677 (2003).Google Scholar
[13] Pearton, S. J., Abernathy, C. R., Norton, D. P., Hebard, A. F., Park, Y. D., Boatner, L. A., and Budai, J. D., Materials Science and Engineering R 40, 137–168 (2003).Google Scholar
[14] Jung, S. W., An, S. J., and Yi, G.-C., Applied Physics Letters 80, 4561–3 (2002).Google Scholar
[15] Hebard, A. F., Norton, D. P., Pearton, S. J., Varatharajan, R., Nause, J., Kane, M. H., and Ferguson, I. T., unpublished data.Google Scholar