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Characterization of Diamond Amorphized by Ion Implantation

Published online by Cambridge University Press:  25 February 2011

William R. Allen  and
Eal H. Lee
William R. Allen
Affiliation:
Metals Ceramics Division, Oak Ridge National Laboratory, P.O. Box 2008, Oak Ridge, TN 37831–6376
Eal H. Lee
Affiliation:
Metals Ceramics Division, Oak Ridge National Laboratory, P.O. Box 2008, Oak Ridge, TN 37831–6376
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Abstract

Single crystal diamond has been implanted at 1 MeV with 2×1020 Ar/m2. Rutherford backscattering spectrometry in a channeled geometry revealed a broad amorphized region underlying a thin, partially crystalline layer. Raman spectroscopy disclosed modifications in the bonding characteristic of the appearance of non-diamond carbon. The complementary nature of the two analysis techniques is demonstrated. The Knoop hardness of the implanted diamond was reduced by implantation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 279: Symposium A – Beam-Solid Interactions–Fundamentals and Applications , 1992 , 333
Copyright
Copyright © Materials Research Society 1993

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