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The characterization of Electronic state from Surface to Several Nanometer Region on MgO:Si Thin Film

Published online by Cambridge University Press:  12 January 2012

Mikihiko Nishitani ,
Mutsumu Fukada ,
Yukihiro Morita ,
Masaharu Terauchi ,
Tessei Kurashiki ,
Hiroki Tsuchiura  and
Yasushi Yamauchi
Mikihiko Nishitani
Affiliation:
Co-operation Laboratory of Panasonic, Osaka University
Mutsumu Fukada
Affiliation:
Co-operation Laboratory of Panasonic, Osaka University
Yukihiro Morita
Affiliation:
Co-operation Laboratory of Panasonic, Osaka University
Masaharu Terauchi
Affiliation:
Co-operation Laboratory of Panasonic, Osaka University
Tessei Kurashiki
Affiliation:
Co-operation Laboratory of Panasonic, Osaka University
Hiroki Tsuchiura
Affiliation:
Department of Applied Physics, Tohoku University
Yasushi Yamauchi
Affiliation:
National Institute for Material Science
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Abstract

We report the properties of MgO:Si film as a protective cathode material on the electrical discharge, and the electronic state of the outer-most surface on MgO:Si film characterized by helium Meta-stable De-excitation Spectroscopy (MDS) and that of several nanometer region from the surface evaluated by X-ray Photoelectron Spectroscopy (XPS). Both of the spectra are discussed focusing on the dependence upon the amount of Si in the MgO film for understanding discharge phenomena. The analyses of the experimental data imply that the discharge properties are not improved due to surface degradation with the increase of Si in MgO films. However, an in-situ discharge experiment, in which MgO:Si films are not exposed for the atmosphere after its deposition, shows that the introduction of Si up to about 1 atomic% has the potential to enhance the secondary electron emission coefficient.

Keywords

Mgx-ray photoelectron spectroscopy (XPS)thin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1406: Symposium Z – Functional Metal-Oxide Nanostructures , 2012 , mrsf11-1406-z18-50
Copyright
Copyright © Materials Research Society 2012

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References

REFERENCES

1. Lee, S. K., Whang, K. W., Kim, J. H., and Lee, J. H., Proc. Society for Information Display SID , San Jose, CA,424 (2002).Google Scholar
2. Nakayama, T. et al. ., Proc. 17th International Display Workshop (IDW ’ 10) 1963 (2010).Google Scholar
3. Kurahashi, M. and Yamauchi, Y., Surface Sci. 420, 259 (1999) .Google Scholar
4. Ram, S.K, et al. ., Thin Solid Films, 517, 6252 (2009).Google Scholar
5. Lee, Don-Kyu et al. ., Applied Physics Letters 89, 191501 (2006)Google Scholar
6. Yoon, Sean J., Lee, Insook, Lee, Jong Wan, and Oh, Byundu, Proc. 6th International Display Workshop (IDW’99) 643 (1999).Google Scholar
7. Blaha, P., Schwarz, K., Madsen, G., Kvasnicka, D., and Luitz, J., WIEN2k, an Augmented Plane Wave + Local Orbitals Program for Calculating Crystal Properties, Karlheinz Schwarz, TU Wien, Austria, 2001, ISBN 3-9501031-1-2.Google Scholar
8. Nishitani, M. et al. . J. Soc. Info. Display 19/1, 8 (2011).Google Scholar
9. Li, Dien, et al. ., American Mineralogist, 79, 622 (1994) .Google Scholar
10. Finster, J., SURFACE AND INTERFACE ANALYSIS, 12, 309 (1988).Google Scholar