Hostname: page-component-78c5997874-lj6df Total loading time: 0 Render date: 2024-11-10T08:28:24.625Z Has data issue: false hasContentIssue false
  • English
  • Français

Characterization of Films Formed during the Corrosion of Copper in Dilute Solutions of Cupric Chloride

Published online by Cambridge University Press:  21 February 2011

L. H. Walsh  and
N. B. Feilchenfeld
L. H. Walsh
Affiliation:
Rome Laboratory, 525 Brooks Rd., Griffiss AFB NY
N. B. Feilchenfeld
Affiliation:
IBM Microelectronics, Endicott NY
Get access

Abstract

Microstructural differences in copper deposited by four techniques commonly used in the microelectronics industry were previously reported. Grain size, preferred orientation, and near surface chemistry were considered. [1] Prediction of the reaction rates were made based on these differences and then correlated with actual measurements. [2] In aerobic conditions the grain size dictated the reaction rate, the smaller the size the faster the rate.[3] The composition of the surface film formed during etching was examined. The trends in chemical concentrations on the surface film vary for each sample, but the relative constituent amounts correlate to the grain size of the original copper samples. Thus, there is further evidence that during exposure to aqueous solutions of cupric chloride, copper corrosion, in terms of both etch rate and film composition, is dictated by grain size of the original copper and not other microstructural factors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 390: Symposium S – Electronic Packaging Materials Science VIII , 1995 , 117
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Walsh, L.H., Feilchenfeld, N.B., Schwarz, J.A., J. Vac. Sci. Technol. A 10 (4), pp. 1493–1496 (1992).Google Scholar
2. Walsh, L.H., Feilchenfeld, N.B., Schwarz, J.A., Proceedings of the 7th International IEEE VLSI Multilevel Interconnection Conference, p. 549 (1993).Google Scholar
3. Walsh, L.H., Feilchenfeld, N.B., Schwarz, J.A., Proceedings of the Materials Research Society, Electronic Packaging Materials Science VII, Vol. 323, 79 (1993).Google Scholar
4. Maissel, L.I. and Glang, R., in Handbook of Thin Film Technology (McGraw-Hill, New York), Chaps. 1 and 2 (1970).Google Scholar
5. White, R.T. Jr, Horwath, R.S., and Cuomo, J., in Principles of Electronic Packaging, edited by Seraphim, D.R., Lasky, R., and Li, C. (McGraw-Hill, New York), pp. 394–423 (1989).Google Scholar
6. Bindra, P., Levine, S.L., Pimbly, W.T., Schaffer, R.F., Reid, J., Underfofler, W.L., and Galasco, R. T., in Principles of Electronic Packaging, edited by Seraphim, D.R., Lasky, R., and Li, C. (McGraw-Hill, New York), pp. 470–518 (1989).Google Scholar
7. O'Sullivan, E.J.M., Horkans, J., White, J.R., and Roldan, J., IBM J. Res. Devel. 32, 591 (1988).Google Scholar
8. Kovac, C.A., Jordan-Sweet, J.L., Goldberg, M.J., Clabes, J.G., Viehbeck, A., and Pollak, R. A., IBM J. Res. Devel. 32, 603 (1988).Google Scholar
9. Ruoff, A.L., Kramer, E.J., and Li, C., IBM J. Res. Devel. 32, 626 (1988).Google Scholar
10. Mausbach, M., Ehrich, H., Mueller, K. G., Mater. Sci. Eng. A 140, 825 (1991).Google Scholar