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Characterization of GaAs/AlGaAs Heterostructure Quantum Wells by Microwave Absorption

Published online by Cambridge University Press:  28 February 2011

Hans P. Zappe  and
Wolfgang Jantz
Hans P. Zappe
Affiliation:
Fraunhofer Institut für Angewandte Festkörperphysik, Eckerstraβe 4 7800 Freiburg, West Germany
Wolfgang Jantz
Affiliation:
Fraunhofer Institut für Angewandte Festkörperphysik, Eckerstraβe 4 7800 Freiburg, West Germany
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Abstract

Magnetic-field-dependent microwave absorption Is shown to be a useful non-destructive and contact-free technique to study transport behavior in GaAs/AlGaAs devices. It allows quick measurement of resistance, mobility and carrier concentration in the two-dimensional electron gas of heterostructure quantum wells. The two and three dimensional conductivities may be separately evaluated allowing detailed study of conduction in the active layer of high electron mobility (HENT) devices. Applications of the approach to examination of device structural dependencies, carrier-density conduction behavior and the effects of etch processing on quantum well integrity are presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 198: Symposium V – Epitaxial Heterostructures , 1990 , 377
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

[1] Jantz, W., Frey, Th. and Bachem, K.H., Appl. Phys. A45, 225 (1988)Google Scholar
[2] Koch, J.F., Advances in Solid State Physics, XV, 79 (1975)Google Scholar
[3] Stannard, J.E., Kennedy, T.A. and McCombe, B.D., J. Vac. Sci. Technol 13(4), 869 (1976)Google Scholar
[4] Braslau, N., Inst. Phys. Conf. Ser. 74, 269 (1985)Google Scholar
[5] Zappe, H.P. and Jantz, W., to be publishedGoogle Scholar
[6] Jiang, C., Tsui, D.C. and Weimann, G., Appl. Phys. Lett. 53(16), 1531 (1988)Google Scholar
[7] Gold, A., Appl. Phys. Lett. 54(21), 2100 (1989)Google Scholar
[8] Hirakawa, K. and Sakaki, H., Phys. Rev. 33(12), 8291 (1986)Google Scholar
[9] As, D.J., Jantz, W., Kaufel, G., Köhler, K., Rothemund, W., Schweizer, Th. and Zappe, H.P., J. Elec. Materials, to appear (1990)Google Scholar