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Characterization of Green Laser Crystallized GeSi Thin Films

Published online by Cambridge University Press:  20 June 2011

Balaji Rangarajan ,
Ihor Brunets ,
Peter Oesterlin ,
Alexey Y. Kovalgin  and
Jurriaan Schmitz
Balaji Rangarajan
Affiliation:
MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500AE Enschede, The Netherlands.
Ihor Brunets
Affiliation:
MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500AE Enschede, The Netherlands.
Peter Oesterlin
Affiliation:
INNOVAVENT GmbH, Bertha-von-Suttner Str. 5, 37085 Gottingen, Germany.
Alexey Y. Kovalgin
Affiliation:
MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500AE Enschede, The Netherlands.
Jurriaan Schmitz
Affiliation:
MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500AE Enschede, The Netherlands.
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Abstract

Green laser crystallization of a-Ge0.85Si0.15 films deposited using Low Pressure Chemical Vapour Deposition is studied. Large grains of 8x2 μm2 size were formed using a location-controlled approach. Characterization is done using Scanning Electron Microscopy, Atomic Force Microscopy, X-Ray Photoelectron Spectroscopy and X-Ray Diffraction.

Keywords

chemical vapor deposition (CVD) (deposition)laser annealinggrain size
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1321: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology , 2011 , mrss11-1321-a06-04
Copyright
Copyright © Materials Research Society 2011

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References

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