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Characterization of Heavily Boron-Doped a-Si:H Films Deposited at Low Substrate Temperatures

Published online by Cambridge University Press:  26 February 2011

Jin Jang ,
Sung Chul Kim ,
Dae Bong Lee  and
Choochon Lee
Jin Jang
Affiliation:
Dept. of Physics & Research Inst. for Basic Sciences, Kyung Hee University, Dongdaemoon-ku, Seoul 131, Korea
Sung Chul Kim
Affiliation:
Dept. of Physics & Research Inst. for Basic Sciences, Kyung Hee University, Dongdaemoon-ku, Seoul 131, Korea
Dae Bong Lee
Affiliation:
Dept. of Physics & Research Inst. for Basic Sciences, Kyung Hee University, Dongdaemoon-ku, Seoul 131, Korea
Choochon Lee
Affiliation:
Dept. of Physics, Korea Advanced Inst. of Science & Technology P.O.Box 150 Chongyangri, Seoul, Korea
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Abstract

The electrical and optical properties of heavily boron-doped hydrogenated amorphous silicon (a-Si:H) films deposited at 100°C with a gas phase doping concentration between B2H6/SiH4=0.001 and 0.1 have been investigated. The absorption edge exhibits the characteristic Urbach form and the width of exponential absorption tail, Eo, increases with increasing doping concentration. The optical gap has a linear relationship with the Eo and it is expected to be 2.20 eV when the Eo is zero. Thus, the disorder determines the optical gap directly whether the sample is doped or undoped, the hydrogen and boron in the film change the disorder. The conversion efficiency of n-i-p cell is improved by 15% if the p-layer is deposited at 100°C after preparing the n- and i-layers ∼250°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 95: Symposium E – Amorphous Silicon Semiconductors--Pure and Hydrogenated , 1987 , 565
Copyright
Copyright © Materials Research Society 1987

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References

1. Scott, B. A. and Reimer, J. A., J. Appl. Phys. 54, 6853(1983).Google Scholar
2. Cody, G. D., Tiedje, T., Abeles, B., Brooks, B. and Gldstein, Y., Phys. Rev. Lett. 47, 1480(1981).Google Scholar
3. Yamasaki, S., Matsuda, A. and Tanaka, K., Jpn. J. Appl. Phys. 21, L789(1982).Google Scholar
4. Jousse, D., Bustarret, E. and Deneuville, A., Phys. Rev. B 34, 7031(1986).Google Scholar
5. Tsai, C. C. and Street, R. A., Proc. Inter. Conf. on Stability of Amorphous Silicon Alloy Materials and Devices (Palo Alto, 1987), in press.Google Scholar