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Characterization of lattice mosaic of a-plane GaN grown on r-plane sapphire by metalorganic vapor-phase epitaxy

Published online by Cambridge University Press:  01 February 2011

Kazuhide Kusakabe ,
Shizutoshi Ando  and
Kazuhiro Ohkawa
Kazuhide Kusakabe
Affiliation:
kusakabe@rs.kagu.tus.ac.jp, Tokyo University of Science, Applied Physics, 1-3 Kazurazaka, Shinjuku, Tokyo, 162-8601, Japan, +81-3-3260-4280, +81-3-3260-4280
Shizutoshi Ando
Affiliation:
ando@rs.kagu.tus.ac.jp, Tokyo University of Science, Electrical Engineering, Japan
Kazuhiro Ohkawa
Affiliation:
ohkawa@rs.kagu.tus.ac.jp, Tokyo University of Science, Applied Physics
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Abstract

Nonpolar a-plane GaN films were grown on r-plane sapphire substrates by atmospheric metalorganic vapor-phase epitaxy. The as-grown layers were studied by high-resolution x-ray diffraction. The a-plane GaN lattice mosaic is orientation dependent as determined by x-ray rocking curve (XRC) measurements. The tilt mosaic measured with the c-axis within the scattering plane (c-mosaic) was greater than the mosaic measured with the m-axis within the scattering plane (m-mosaic). The mosaic along both azimuths decreased and the c-mosaic/m-mosaic ratio was increased with increase of growth temperature from 1050 °C to 1080 °C. The morphological transition was correlated to change in the a-plane GaN tilt mosaic measured by XRC.

Keywords

epitaxyx-ray diffraction (XRD)nitride
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 892 , 2005 , 0892-FF26-05
Copyright
Copyright © Materials Research Society 2006

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