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Characterization of Near-Edge-Optical Transitions in Undoped and Doped GaN/Sapphire Grown by MOVPE, HVPE, and GSMBE

Published online by Cambridge University Press:  10 February 2011

M. Leroux ,
B. Beaumont ,
N. Grandjean ,
J. Massies  and
P. Gibart
M. Leroux
Affiliation:
Centre de Recherches sur l’Hétéro-Epitaxie et ses Applications-CNRS, Rue B. Grégory, 06560 Valbonne (France), email: mleroux@crheal .unice.fr
B. Beaumont
Affiliation:
Centre de Recherches sur l’Hétéro-Epitaxie et ses Applications-CNRS, Rue B. Grégory, 06560 Valbonne (France), email: mleroux@crheal .unice.fr
N. Grandjean
Affiliation:
Centre de Recherches sur l’Hétéro-Epitaxie et ses Applications-CNRS, Rue B. Grégory, 06560 Valbonne (France), email: mleroux@crheal .unice.fr
J. Massies
Affiliation:
Centre de Recherches sur l’Hétéro-Epitaxie et ses Applications-CNRS, Rue B. Grégory, 06560 Valbonne (France), email: mleroux@crheal .unice.fr
P. Gibart
Affiliation:
Centre de Recherches sur l’Hétéro-Epitaxie et ses Applications-CNRS, Rue B. Grégory, 06560 Valbonne (France), email: mleroux@crheal .unice.fr
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Abstract

We report a comparative study by luminescence and reflectivity of GaN grown on sapphire by MOVPE, HVPE and GSMBE. Whatever the growth technique, undoped GaN shows well resolved reflectivity spectra, allowing hetero-epitaxial strain to be taken into account in the interpretation of luminescence spectra. MOVPE provides the highest purity samples so far. From the luminescence study of n- and p-type doped samples, activation energies of 265 ± 10 meV and 34 ± 2 meV are deduced for Mg acceptors and Si donors respectively. From the luminescence spectra of HVPE grown samples, the presence of a perturbed interfacial n+ layer is evidenced.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 695
Copyright
Copyright © Materials Research Society 1997

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References

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