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Characterization of Pb(ScTa)1−xTixO3 (x<0.3) Thin Films Grown on LaNiO3 Coated Si by MOCVD

Published online by Cambridge University Press:  10 February 2011

C. H. Lin ,
H. C. Kuo ,
G. E. Stillman  and
Haydn Chen
C. H. Lin
Affiliation:
Department of Materials Science and Engineering and Materials Research Laboratory, University of Illinois at Urbana-Champaign
H. C. Kuo
Affiliation:
Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign
G. E. Stillman
Affiliation:
Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign
Haydn Chen
Affiliation:
Department of Materials Science and Engineering and Materials Research Laboratory, University of Illinois at Urbana-Champaign
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Abstract

Highly (100) textured pseudo-cubic Pb(ScTa)1−xTixO3 (x=0-0.3) (PSTT) thin films were grown by metal-organic chemical vapor deposition (MOCVD) on LaNiO3 (LNO) electrode buffered Si substrates at 650 °C. The microstructure and chemical uniformity were studied using X-ray diffraction (XRD), scanning electron microscope (SEM), transmission electron microscope (TEM) and nanoprobe X-ray energy dispersive spectroscopy (EDS). The temperature dependence of dielectric properties and P-E behavior were measured. A shift of Curie temperature of these PST-based thin films due to Ti addition was demonstrated, Furthermore, the pyroelectric properties of these thin films were estimated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 541: Symposium O – Ferroelectric Thin Films VII , 1998 , 679
Copyright
Copyright © Materials Research Society 1999

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References

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