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Characterization of Polycrystalline Silicon Thin Films by Photoluminescence

Published online by Cambridge University Press:  21 February 2011

R. Pandya  and
K. Shahzad
R. Pandya
Affiliation:
Philips Laboratories, North American Philips Corporation, Briarcliff Manor New York, 10510, U.S.A
K. Shahzad
Affiliation:
Philips Laboratories, North American Philips Corporation, Briarcliff Manor New York, 10510, U.S.A
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Abstract

Photoluminescence (PL) measurements have been carried out in hydrogenated and as deposited polycrystalline silicon thin films deposited on quartz substrates. Behavior of the PL spectrum as a function of temperature and intensity in the hydrogenated samples is reported. A mechanism that provides a qualitative explanation for the observed PL results is described. In the unhydrogenated sample the signal was much weaker and we were unable to observe any signals over an appreciable range of intensity and temperatures. The cause for much lower signals in the unhydrogenated sample is most likely due to higher surface recombination velocity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 182: Symposium C – Polysilicon Thin Films and Interfaces , 1990 , 213
Copyright
Copyright © Materials Research Society 1990

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