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Characterization of Preclean Induced Surface Damage by Rapid Thermal Processing

Published online by Cambridge University Press:  28 February 2011

T. Y. Hsieh ,
K. H. Jung ,
D. L. Kwong ,
T. H. Koschmieder  and
J. C. Thompson
T. Y. Hsieh
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX 78712
K. H. Jung
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX 78712
D. L. Kwong
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX 78712
T. H. Koschmieder
Affiliation:
Department of Physics, The University of Texas at Austin, Austin, TX 78712
J. C. Thompson
Affiliation:
Department of Physics, The University of Texas at Austin, Austin, TX 78712
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Abstract

In-situ precleaning of the substrate surface plays a critical role in Si epitaxial growth. We have demonstrated that the preclean process can cause considerable surface damage, which strongly depends on process parameters such as system base pressure and temperature. Nomarski optical microscopy, SEM, and optical reflectance were used to characterize the surface morphology. Optical reflectance was more sensitive to surface damage but was also strongly dependent on substrate dopant redistribution after high temperature processing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 224: Symposium F – Rapid Thermal and Integrated Processing I , 1991 , 279
Copyright
Copyright © Materials Research Society 1991

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