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Characterization of the CuGaSe2/ZnSe Interface Using Kelvin Probe Force Microscopy

Published online by Cambridge University Press:  21 March 2011

S. Sadewasser ,
Th. Glatzel ,
M. Rusu ,
A. Meeder ,
D. Fuertes Marrón ,
A. Jäger-Waldau  and
M.Ch. Lux-Steiner
S. Sadewasser
Affiliation:
Hahn-Meitner Institut, Glienicker Str. 100, 14109 Berlin, Germany
Th. Glatzel
Affiliation:
Hahn-Meitner Institut, Glienicker Str. 100, 14109 Berlin, Germany
M. Rusu
Affiliation:
State University of Moldova, Department of Physics, 60, a. Mateevici Street, Chisinau, MD-2009, Moldova
A. Meeder
Affiliation:
Hahn-Meitner Institut, Glienicker Str. 100, 14109 Berlin, Germany
D. Fuertes Marrón
Affiliation:
Hahn-Meitner Institut, Glienicker Str. 100, 14109 Berlin, Germany
A. Jäger-Waldau
Affiliation:
Hahn-Meitner Institut, Glienicker Str. 100, 14109 Berlin, Germany
M.Ch. Lux-Steiner
Affiliation:
Hahn-Meitner Institut, Glienicker Str. 100, 14109 Berlin, Germany
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Abstract

To improve the efficiency of heterostructure solar cells based on chalcopyrite semiconductors a good understanding of the interface properties is crucial. By Kelvin Probe Force Microscopy it is possible to obtain laterally resolved images of the work function of semiconductor surfaces in addition to the topographical information usually obtained by noncontact atomic force microscopy. We studied the CuGaSe2/ZnSe interface prepared by growth of CuGaSe2 onto the (110) face of freshly cleaved ZnSe single crystals using chemical vapor deposition. We observed different work function values for different crystal facets on single CuGaSe2 grains. From the obtained work function data and surface photovoltage measurements a schematic band diagram for the CuGaSe2/ZnSe heterostructure is proposed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 668: Symposium H – II-IV Compound Semiconductor Photovoltaic Materials , 2001 , H5.4
Copyright
Copyright © Materials Research Society 2001

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References

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