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Characterization of the Segregation of Arsenic at the Interface SiO2/Si

Published online by Cambridge University Press:  01 February 2011

Christian Steen ,
Peter Pichler ,
Heiner Ryssel ,
Lirong Pei ,
Gerd Duscher ,
Matt Werner ,
Jaap A. van den Berg  and
Wolfgang Windl
Christian Steen
Affiliation:
christian.steen@leb.eei.uni-erlangen.de, University of Erlangen-Nuremberg, Chair of Electron Devices, Cauerstr. 6, Erlangen, 91058, Germany
Peter Pichler
Affiliation:
peter.pichler@iisb.fraunhofer.de, Fraunhofer Institute of Integrated Systems and Device Technology, 91058 Erlangen, Germany
Heiner Ryssel
Affiliation:
heiner.ryssel@iisb.fraunhofer.de, University of Erlangen-Nuremberg, 91058 Erlangen, Germany
Lirong Pei
Affiliation:
lpei@ncsu.edu, North Carolina State University, Raleigh, NC, 27695-7907, United States
Gerd Duscher
Affiliation:
gerd_duscher@ncsu.edu, North Carolina State University, Raleigh, NC, 27695-7907, United States
Matt Werner
Affiliation:
m.werner@salford.ac.uk, University of Salford, Salford, M5 4WT, United Kingdom
Jaap A. van den Berg
Affiliation:
j.a.vandenberg@salford.ac.uk, University of Salford, Salford, M5 4WT, United Kingdom
Wolfgang Windl
Affiliation:
windl.1@osu.edu, Ohio State University, Columbus, OH, 43210-1178, United States
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Abstract

The segregation of As atoms at the Si/SiO2 interface during annealing was investigated by grazing incidence X-ray fluorescence spectroscopy in combination with successive removal of silicon layers by etching with thicknesses on the order of a nanometer. With this method it is possible to clearly distinguish between the segregated atoms and the As atoms in the bulk over a large range of implantation doses from 3·12 cm−2 to 1·16 cm−2. The samples were annealed at 900 °C and 1000 °C, respectively, for times sufficiently long to ensure that the segregation reflects an equilibrium effect. The results were confirmed by medium energy ion scattering, Z-contrast measurements and electron energy loss spectroscopy.

Keywords

defectsSistorage
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 994: Symposium F – Semiconductor Defect Engineering–Materials, Synthetic Structures and Devices II , 2007 , 0994-F08-02
Copyright
Copyright © Materials Research Society 2007

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References

1. Sai-Halasz, G. A. Short, K. T., and Williams, J. S., IEEE Electron Device Lett. 6, 285 (1985).Google Scholar
2. Shibahara, K., Furumoto, H., Egusa, K., Koh, M., and Yokoyama, S., Mat. Res. Soc. Symp. Proc. 532, 23 (1998).Google Scholar
3. Sato, Y., Nakata, J., Imai, K., and Arai, E., J. Electrochem. Soc. 142, 655 (1995).Google Scholar
4. Kasnavi, R., Sun, Y., Mo, R., Pianetta, P., Griffin, P. B., and Plummer, J. D., J. Appl. Phys. 87, 2255 (2000).Google Scholar
5. Ferri, M., Solmi, S., Parisini, A., Bersani, M., Giubertoni, D., and Barozzi, M., J. Appl. Phys. 99, 113508 (2006).Google Scholar
6. Berg, J. A. Van den, Armour, D. G., Zhang, S., Whelan, S., Ohno, H., Wang, T.-S., Cullis, A. G., Collart, E. H. J., Goldberg, R. D., Bailey, P., and Noakes, T. C. Q., J. Vac. Sci. Technol. B 20, 974 (2002).Google Scholar
7. Chu, W.K., Mayer, J.W., Nicolet, M., Backscattering Spectrometry, Academic, New York, 1978.Google Scholar
8. Bardwell, J. A., Draper, N., and Schmuki, P., J. Appl. Phys. 79(11), 8761 (1996).Google Scholar
9. Ryssel, H., Schmid, K., and Müller, H., J Physics E 6, 492 (1973).Google Scholar
10. Windl, W., Liang, T., Lopatin, S., and Duscher, G., Mater. Sci. Eng. B 114–115, 156 (2004).Google Scholar
11. Dabrowski, J., Müssig, H.-J., Zavodinsky, V., Baierle, R., and Caldas, M. J., Physical Review B 65, 245305 (2002).Google Scholar