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Characterization of the Thin Oxide-Nitride-Oxide (ONO) Structure Using Spectroscopic Ellipsometry

Published online by Cambridge University Press:  28 February 2011

Leo M. Asinovsky  and
Steve Zierer
Leo M. Asinovsky
Affiliation:
Rudolph Research, Flanders, NJ 07836
Steve Zierer
Affiliation:
Digital Equipment Corp., Hudson, MA 01749
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Abstract

Spectroscopic ellipsometry has been used to characterize thin oxide/nitride/oxide (ONO) layer structures. Films were deposited on top of the Si/oxide/polysilicon filmstack using a low-pressure chemical vapor deposition (LPCVD) technique. Different approaches to modeling this structure are compared to select an adequate representation. Analysis of the data for the three-layer-with-abrupt-interfaces ONO model using an effective-medium or Cauchy approximation shows strong correlation of the parameters and ambiguity of the results. A more robust and physically plausible model of the ONO structure as an inhomogeneous oxynitride film with Gaussian distribution of the silicon nitride component is suggested. This interpretation of the ONO structure is supported by the results of Auger electron spectroscopy (AES) and transmission electron microscopy (XTEM).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 358: Symposium F – Microcrystalline and Nanocrystalline Semiconductors , 1994 , 1029
Copyright
Copyright © Materials Research Society 1995

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References

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