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Characterization of Thin Layers of Metal Clusters Embedded in Silica Glass Formed by High Dose Ion Implantation

Published online by Cambridge University Press:  17 March 2011

P.S. Chung ,
S.P. Wong ,
W.Y. Cheung ,
N. Ke ,
W.K. Lee  and
C.W. Chan
P.S. Chung
Affiliation:
Department of Electronic Engineering and Materials Science and Technology Research Centre, The Chinese University of Hong Kong, Shatin, N.T., Hong Kong, China
S.P. Wong
Affiliation:
Department of Electronic Engineering and Materials Science and Technology Research Centre, The Chinese University of Hong Kong, Shatin, N.T., Hong Kong, China
W.Y. Cheung
Affiliation:
Department of Electronic Engineering and Materials Science and Technology Research Centre, The Chinese University of Hong Kong, Shatin, N.T., Hong Kong, China
N. Ke
Affiliation:
Department of Electronic Engineering and Materials Science and Technology Research Centre, The Chinese University of Hong Kong, Shatin, N.T., Hong Kong, China
W.K. Lee
Affiliation:
Department of Physics and Materials Science and Technology Research Centre, The Chinese University of Hong Kong, Shatin, N.T., Hong Kong, China
C.W. Chan
Affiliation:
Department of Physics and Materials Science and Technology Research Centre, The Chinese University of Hong Kong, Shatin, N.T., Hong Kong, China
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Abstract

Thin layers of metal clusters in silica glass were formed by high dose ion implantation of Ag, Ni and Cu using a metal vapor vacuum arc (MEVVA) ion source. Characterization of the implanted layers was performed using Rutherford backscattering spectroscopy, transmission electron microscopy, x-ray diffraction, and optical measurements. The nonlinear optical properties of the implanted samples were studied by the z-scan method, using a self mode-locked Ti: sapphire laser delivering linearly polarized pulses of 130fs long at a wavelength of 790nm at 76MHz. The variation of the intensity-dependent refractive index n2 with the ion species and the implantation conditions were studied. An n2 value of about 0.6 cm2/GW was measured for one of the Cu and Ni co-implanted samples. The correlation between n2 and the cluster size was also analyzed. Ellipsometry spectra of the samples were measured in the visible range from 0.4 to 0.7 [.proportional]m and in the near infrared range from 0.9 to 1.6 [.proportional]m. Preliminary results are reported on our attempt to deduce the effective complex refractive indices of the implanted layers by fitting of the ellipsometry spectra using a simple single uniform layer on substrate model and the Maxwell-Garnett effective medium approximation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 647: Symposium O – Ion Beam Synthesis & Processing of Advanced Materials , 2000 , O5.11
Copyright
Copyright © Materials Research Society 2001

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