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Characterizations of HgTe nanocrystals induced by controlled precipitation in PbTe-4HgTe semiconductor alloys

Published online by Cambridge University Press:  21 March 2011

Manjong Lee  and
Choong-Un Kim
Manjong Lee
Affiliation:
Materials Science and Engineering Program, The University of Texas at Arlington, P. O. Box 19031, Arlington, TX 76019, USA
Choong-Un Kim
Affiliation:
Materials Science and Engineering Program, The University of Texas at Arlington, P. O. Box 19031, Arlington, TX 76019, USA
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Abstract

This paper reports the observation of HgTe precipitate formation and its subsequent evolution in a PbTe semiconductor matrix containing 4 mol. % HgTe (PbTe-4HgTe) produced by a controlled precipitation process. The controlled precipitation process is being developed as a new way to produce a large number of quality semiconductor nanocrystals more simply than the conventional methods. Characterization of the HgTe precipitates resulting from application of controlled precipitation to the PbTe-4HgTe alloy system provides evidence that this method is effective in generating nanocrystals. Transmission electron microscopy of the processed alloys reveals that HgTe precipitates are extremely small in size, maintain a coherent interface, and experience a unique shape evolution with aging.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 676: Symposium Y – Synthesis, Functional Properties and Applications of Nanostructures , 2001 , Y1.7
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1. Miller, D. A. B., Chemla, D. S., Schmitt-Rink, S., Appl. Phys. Lett. 52, 2154 (1988).Google Scholar
2. Klim ov, V. I., Mikhailovsky, A. A., Xu, Su, Malko, A., Hollingsworth, J. A., Leatherdale, C. A., Eisler, H. -J., Bawendi, M. G., Science 290, 314 (2000)Google Scholar
3. Bockelm, U. ann, Bastard, G., Phys. Rev. B 42, 8947 (1990).Google Scholar
4. Lee, M. and Kim, C.-U., Physica B, in print.Google Scholar
5. Nicholson, R. B., Thomas, G., Nutting, J., J. Inst. M etals 87, 429 (1958-59);Google Scholar
Forareview see Martin, J. W., Precipitation Hardening, (Pergam on, New York, 1968).Google Scholar
6. Nimtz, G., Numerical Data and Functional Relationships in Science and Technology, edited by Hellwege, K. and Madelung, O., Landolt-Bönrs tein, New Series Group III, Vol. 17 (Springer, Berlin, 1983) p 170.Google Scholar
7. Werner, A., Hochheimer, H. D., Strössner, K., Jayaraman, A., Phys. Rev. B 28 (1983) 3330 Google Scholar
8. Khachaturyan, A. G., Semenovskaya, S. V. and Morris, J. W. Jr, Acta Metall. 36, 1563 (1988).Google Scholar
9. Wang, Y. and Khachaturyan, A. G., Acta Metall. Mater. 43, 1837 (1995)Google Scholar