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Charge coupled cyclotron motion of electrons and holes in InGaAsN epitaxial layers

Published online by Cambridge University Press:  26 February 2011

H. E. Porteanu ,
O. Loginenko ,
F. Koch ,
G. Dumitras ,
L. Geelhaar  and
H. Riechert
H. E. Porteanu
Affiliation:
Physik-Department E16, TU München, James-Franck-Str. 1, 85747 Garching, Germany
O. Loginenko
Affiliation:
Physik-Department E16, TU München, James-Franck-Str. 1, 85747 Garching, Germany
F. Koch
Affiliation:
Physik-Department E16, TU München, James-Franck-Str. 1, 85747 Garching, Germany
G. Dumitras
Affiliation:
Infineon Technologies, Corporate Research, CPR 7 D-81730 München, Germany
L. Geelhaar
Affiliation:
Infineon Technologies, Corporate Research, CPR 7 D-81730 München, Germany
H. Riechert
Affiliation:
Infineon Technologies, Corporate Research, CPR 7 D-81730 München, Germany
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Abstract

Time resolved cyclotron resonance measurements are used to investigate more in further detail the effective mass of electrons and holes in InGaAsN epitaxial layers. The In and N content in the alloy are adjusted to yield the latticematching of the epilayers (200 nm thick) to GaAs. A continuous increase of the effective mass of electron and an increase of the resonance associated with holes is observed. Through the evolution of the imaginary part of conductivity as a function of the elapsed time we show that this observation is a coupled cyclotron resonance that may have maxima in the real part of conductivity but should not be necessarily correlated with the “increase” of the effective mass.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 829: Symposium B – Progress in Compound Semiconductor Materials IV – Electronic and Optoelectronic Applications , 2004 , B11.4
Copyright
Copyright © Materials Research Society 2005

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References

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