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Charge motion and trapping in molecularly doped hole transporters

Published online by Cambridge University Press:  01 February 2011

H.H. Fong ,
K.C. Lun  and
S.K. So
H.H. Fong
Affiliation:
Department of Physics, Hong Kong Baptist University, Kowloon Tong, Hong Kong, China.
K.C. Lun
Affiliation:
Department of Physics, Hong Kong Baptist University, Kowloon Tong, Hong Kong, China.
S.K. So
Affiliation:
Department of Physics, Hong Kong Baptist University, Kowloon Tong, Hong Kong, China.
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Abstract

The charge transporting properties of N, N'-dipheny l-N, N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine (TPD), TPD doped with 5,6,11,12- tetraphenylnaphthacene (rubrene), and TPD doped with 4-(dicyanomethylene)-2-methyl-6-(pdimethylaminostyryle) 4H-pyran (DCM1) were examined by time-of-flight (TOF) technique between 180-300K. The dependence of the mobility on electric field and temperature for undoped and doped TPD was investigated. Reductions in hole mobility shows that both dopants act as hole traps in TPD. Computational results of TPD also account for the effective hole conduction in pristine TPD film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 725: Symposium P – Organic and Polymeric Materials and Devices-Optical, Electrical, and Optoelectronic Properties , 2002 , P8.1
Copyright
Copyright © Materials Research Society 2002

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