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Charge Trapping and Degradation Properties of PZT Thin Films for MEMS

Published online by Cambridge University Press:  15 February 2011

Hyeon-Seag Kim ,
D. L. Polla  and
S. A. Campbell
Hyeon-Seag Kim
Affiliation:
Department of Electrical Engineering, University of Minnesota Minneapolis, Minnesota 55455, hskim@ee.umn.edu
D. L. Polla
Affiliation:
Department of Electrical Engineering, University of Minnesota Minneapolis, Minnesota 55455, hskim@ee.umn.edu
S. A. Campbell
Affiliation:
Department of Electrical Engineering, University of Minnesota Minneapolis, Minnesota 55455, hskim@ee.umn.edu
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Abstract

The electrical reliability properties of PZT (54/46) thin films have been measured for the purpose of integrating this material with silicon-based microelectromechanical systems. Ferroelectric thin films of PZT were prepared by metal organic decomposition. The charge trapping and degradation properties of these thin films were studied through device characteristics such as hysteresis loop, leakage current, fatigue, dielectric constant, capacitancevoltage, and loss factor measurements. Several unique experimental results have been found. Different degradation processes were verified through fatigue (bipolar stress), low and high charge injection (unipolar stress), and high field stressing (unipolar stress).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 444: Symposium I – Materials for Mechanical and Optical Microsystems , 1996 , 161
Copyright
Copyright © Materials Research Society 1997

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