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Charge Trapping Sites in nc-RuO Embedded ZrHfO High-k Nonvolatile Memories

Published online by Cambridge University Press:  01 February 2011

Chen-Han Lin  and
Yue Kuo
Chen-Han Lin
Affiliation:
alou0822@neo.tamu.edu, Texas A&M University, Thin Film Nano & Microelectronics Research Laboratory, College Station, Texas, United States
Yue Kuo
Affiliation:
yuekuo@tamu.edu, Texas A&M University, Thin Film Nano &
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Abstract

Materials and electrical properties of the MOS capacitor containing nc-RuO embedded in the high-k ZrHfO dielectric film have been studied. The electron- and hole-trapping capacities and trapping sites in this kind of device were investigated using the constant voltage stress method, the frequency-dependent C-V measurement, and the retention characteristics. The negligible charge trapping phenomenon in the non-embedded device rules out the possibility of any trapping site in the bulk ZrHfO film or at the Si/ZrHfO interface. The electrical characterization result suggests that electrons are trapped in the bulk nc-RuO. However, holes have two possible trapping sites, i.e., in the bulk nc-RuO or at the nc-RuO/ZrHfO interface.

Keywords

dielectricdielectric propertiesmemory
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1250: Symposium G – Materials and Physics for Nonvolatile Memories II , 2010 , 1250-G01-08
Copyright
Copyright © Materials Research Society 2010

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