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A Chemical Bonding Model for Photo-Induced Defects in Hydrogenated Amorphous Silicon (a-Si:H): Intrinsic and Extrinsic Reaction Pathways

Published online by Cambridge University Press:  15 February 2011

G. Lucovsky  and
H. Yang
G. Lucovsky
Affiliation:
Departments of Physics, Electrical and Computer Engineering, Materials Science and Engineering, and Chemistry, North Carolina State University, Raleigh, NC 27695
H. Yang
Affiliation:
Departments of Physics, Electrical and Computer Engineering, Materials Science and Engineering, and Chemistry, North Carolina State University, Raleigh, NC 27695
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Abstract

In device grade a-Si:H photo- or light-induced defect generation is an intrinsic effect for impurity concentrations of oxygen and nitrogen below about 1019 to 1020 cm−3; however, at higher concentrations it increases with increasing impurity content. Charged defect configurations are identified by empirical chemistry and are studied by ab initio calculations. This paper addresses: i) the chemical stability of charged defects, ii) the reaction pathways for defect metastability, and iii) the transition between extrinsic and intrinsic behavior.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 467: Symposium A – Amorphous and Microcrystalline Silicon Technology - 1997 , 1997 , 31
Copyright
Copyright © Materials Research Society 1997

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References

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