Hostname: page-component-745bb68f8f-v2bm5 Total loading time: 0 Render date: 2025-01-30T00:05:57.385Z Has data issue: false hasContentIssue false
  • English
  • Français

Chemical Vapor Deposition of Diamond from Alcohol Precursors at 1.0 Torr

Published online by Cambridge University Press:  10 February 2011

Donald R. Gilbert ,
Rajiv K. Singh  and
Ming Huang
Donald R. Gilbert
Affiliation:
University of Florida, Department of Materials Science and Engineering, Gainesville, FL 32611
Rajiv K. Singh
Affiliation:
University of Florida, Department of Materials Science and Engineering, Gainesville, FL 32611
Ming Huang
Affiliation:
University of Florida, Department of Chemical Engineering, Gainesville, FL 32611
Get access

Abstract

Typically, diamond chemical vapor deposition (CVD) is conducted at pressures of 10 to 100 Torr and temperatures of 700 - 1000 °C. Both thermally activated (hot-filament) and plasma enhanced (DC, microwave) systems are used to deposit diamond from mixtures of hydrogen and some carbon-containing monomer, most typically methane. These systems may produce films of high phase purity which typically exhibit tensile intrinsic (non-thermal) growth stresses. We have used an electron cyclotron resonance (ECR) enhanced plasma system to deposit diamond films at a pressure of 1 Torr over a temperature range of 550 - 700 °C using methyl alcohol as the carbon source. Optical emission spectroscopy (OES) was used to analyze the plasma discharge for the determination of active species present during diamond growth. Correlations of emission variations with film characteristics were made to evaluate their importance in the diamond formation process. Particular emphasis was placed on the nature of the intrinsic growth stresses developed in this process, which appeared to be consistently compressive in nature based on Raman analysis.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 555: Symposium OO – Properties and Processing of Vapor-Deposited Coatings , 1998 , 227
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Ramesham, R. and Roppel, T., J. Mater. Res. 5, 1144 (1992)Google Scholar
2. Fayette, L., Mermoux, M., and Marcus, B., Diam. Rel. Mater. 3, 480 (1994)Google Scholar
3. Yugo, S., Kanai, T., Kimura, T., and Muto, T., Appl. Phys. Lett. 58, 1036 (1991)Google Scholar
4. Gerber, J., Weiler, M., Sohr, O., Jung, K., and Ehrardt, H., Diam. Rel. Mater. 3, 506 (1994)Google Scholar
5. Chen, C. J., Chang, L., Lin, T. S., and Chen, F. R., J. Mater. Res. 10, 3041 (1995)Google Scholar
6. Reinke, P., Kania, P., and Oelhafen, P., Thin Solid Films 270, 124 (1995)Google Scholar
7. Valdes, J. L., Mitchel, J. W., Mucha, J. A., Seibles, L., and Huggins, H., J. Electrochem. Soc. 138,635 (1991)Google Scholar
8. Yang, G. S., Aslam, M., Kuo, K. P., Reinhard, D. K., and Asmussen, J., J. Vac. Sci. Technol. B 13, 1030 (1995)Google Scholar
9. Carasso, M. L., Adair, J. H., Demkowicz, P. A., Gilbert, D. R., and Singh, R. K., SPIE Proceedings Vol.3060, 203–12 (1997)Google Scholar
10. Makita, H., Nishimura, K., Jiang, N., Hatta, A., Ito, T., Hiraki, A., Thin Solid Films 281, 279 (1996)Google Scholar
11. Singh, R. K., Gilbert, D., Tellshow, R., Holloway, P. H., Ochoa, R., Simmons, J. H., and Koba, R., App. Phys. Lett. 61, 2863–5 (1992)Google Scholar
12. Gilbert, Donald R., Carasso, Melanie L., Demkowicz, Paul A., Singh, Rajiv K., and Adair, James H., J. Electron. Mater. 26, 1326 (1997)Google Scholar
13. Coburn, J. W. and Chen, M., J. Appl. Phys. 51, 3134 (1980)Google Scholar