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Chemical Vapor Deposition of Silicon Films Using Hexachlorodisilane

Published online by Cambridge University Press:  26 February 2011

R. C. Taylor ,
B. A. Scott ,
S.-T. Lin ,
F. LeGoues  and
J. C. Tsang
R. C. Taylor
Affiliation:
IBM Watson Research Center, Yorktown Heights, NY 10598
B. A. Scott
Affiliation:
IBM Watson Research Center, Yorktown Heights, NY 10598
S.-T. Lin
Affiliation:
IBM Watson Research Center, Yorktown Heights, NY 10598
F. LeGoues
Affiliation:
IBM Watson Research Center, Yorktown Heights, NY 10598
J. C. Tsang
Affiliation:
IBM Watson Research Center, Yorktown Heights, NY 10598
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Abstract

The use of hexachlorodisilane (Si2Cl6) as an alternative to silane for growth of polycrystalline silicon films has been investigated. Films were grown at atmospheric pressure in both hydrogen and nitrogen carrier gases over a temperature range of 450–900°C. Deposition rate data indicate the existence of two growth regimes at high and low temperatures and in the presence or absence of hydrogen. The change from amorphous to polycrystalline growth takes place at 600–650°C. At 600°C deposited films are amorphous but crystallize during the growth process. The chlorine content of high-temperature films was found to be less than 0.01 at.%.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 77: Symposium D – Interfaces, Superlattices, and Thin Films , 1986 , 709
Copyright
Copyright © Materials Research Society 1987

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References

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