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Chemical Vapor Deposition of Silicon Insulating Films Induced with a Perpendicular Electron Beam

Published online by Cambridge University Press:  21 February 2011

H. Zarnani ,
J. J. Rocca ,
D. Bishop ,
N. W. Cody  and
G. J. Collins
H. Zarnani
Affiliation:
Department of Electrical Engineering, Colorado State University, Fort Collins, CO 80523
J. J. Rocca
Affiliation:
Department of Electrical Engineering, Colorado State University, Fort Collins, CO 80523
D. Bishop
Affiliation:
Department of Electrical Engineering, Colorado State University, Fort Collins, CO 80523
N. W. Cody
Affiliation:
Department of Electrical Engineering, Colorado State University, Fort Collins, CO 80523
G. J. Collins
Affiliation:
Department of Electrical Engineering, Colorado State University, Fort Collins, CO 80523
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Abstract

SiO2 and Si3N4 thin films have been deposited at a substrate temperature of 350° using a glow discharge electron beam irradiating perpendicular to the wafer surface. Deposition rates up to 1000 Å/min and 250 Å/min respectively have been obtained. Films deposited over 4 inch diameter silicon wafers show uniformity of 5 percent. The deposition conditions and film properties are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 38: Symposium F – Plasma Synthesis and Etching of Electronic Materials , 1984 , 357
Copyright
Copyright © Materials Research Society 1985

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References

1. Thompson, L. R., Rocca, J. J., Emery, K. A., Boyer, P. K. and Collins, G. J., Appl. Phys. Lett. 777, 48, 1983.Google Scholar
2. Bishop, D. C., Emery, K. A., Rocca, J. J., Thompson, L. R., Zarnani, H., and Collins, G. J., Appl. Phys. Lett. 598, 44, 1984.Google Scholar
3. Rocca, J. J., Meyer, J. O., Farrell, M. R., and Collins, G. J., J. Appl. Phys. 56, 3, 1984.CrossRefGoogle Scholar
4. Thompson, L. R., Gobis, L., Bishop, D., Emery, K. A. and Collins, G. J., J. of The Elect. Soc., 462, 131, 1984.Google Scholar