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Cl2 Chemically Assisted Sputter-Etching of Permalloy

Published online by Cambridge University Press:  21 February 2011

M. J. Vasile  and
C. J. Mogab
M. J. Vasile
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
C. J. Mogab
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
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Abstract

Redeposition-free patterns have been etched in 3000Å thick permalloy films using the technique of chemically assisted sputter-etching. This technique involves the simultaneous adsorption of a reactant gas from a molecular beam source and normally incident argon ion bombardment. Experimental conditions with Cl2 adsorption can be maintained to etch the permalloy at 80Å/min and to etch positive photoresist at 110Å/min. These etch rates are not significantly different from rates obtained with argon ion milling, even though the permalloy surface is known to incorporate Cl2. Re-deposited material observed with Cl2 chemically assisted sputtering has been shown to be water soluble, and can be completely removed from feature side-walls prior to stripping the resist. Linewidth measurements show that no feature broadening occurs on 2 micron line and space patterns, within the precision of the measurement (±0.2 micron).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 38: Symposium F – Plasma Synthesis and Etching of Electronic Materials , 1984 , 275
Copyright
Copyright © Materials Research Society 1985

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