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CMOS Compatible Synthesis of Carbon Nanotubes

Published online by Cambridge University Press:  01 February 2011

Takashi Uchino
Affiliation:
tu@ecs.soton.ac.uk, University of Southampton, Electronics and Computer Science, Southampton, SO17 1BJ, United Kingdom
Konstantinos N. Bourdakos
Affiliation:
gna203@soton.ac.uk, University of Southampton, Physics and Astronomy, B46 - Physics, University Road, Southampton, SO17 1BJ, United Kingdom
Gregory N. Ayre
Affiliation:
g.n.ayre@phys.soton.ac.uk, University of Southampton, Physics and Astronomy, Southampton, SO17 1BJ, United Kingdom
Cornelis H. de Groot
Affiliation:
chdg@ecs.soton.ac.uk, University of Southampton, Electronics and Computer Science, Southampton, SO17 1BJ, United Kingdom
Peter Ashburn
Affiliation:
pa@ecs.soton.ac.uk, University of Southampton, Electronics and Computer Science, Southampton, SO17 1BJ, United Kingdom
David C. Smith
Affiliation:
dcsmith@phys.soton.ac.uk, University of Southampton, Physics and Astronomy, Southampton, SO17 1BJ, United Kingdom
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Abstract

A technique to synthesize high-quality single walled carbon nanotubes (SWNTs) using chemical vapour deposition (CVD) on Ge Stranski-Krastanow dots has been developed. From transmission electron microscopy and Raman measurements, the grown carbon nanotubes (CNTs) are identified as SWNTs with diameters ranging from 1.6 to 2.1 nm. Extensive scanning electron microscopy and atomic force characterisation of the effect of each stage in the growth process is presented. Our hypothesis is that pre-treatment stages lead to the formation of Ge nanoparticles, which act as seeds for CNT growth. This technique demonstrates the ability to synthesize high-quality SWNTs without the need for a metal catalyst, using processes and equipment standard to a silicon foundry.

Type
Research Article
Copyright
Copyright © Materials Research Society 2008

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References

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