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Coarsening of Ga2Se3 Islands on GaAs Substrates

Published online by Cambridge University Press:  25 February 2011

J.E. Palmer ,
S. Zembutsu ,
S. Tohno  and
A. Katsui
J.E. Palmer
Affiliation:
NTT Optoelectronics Laboratories, Tokai-Mura, Naka-Gun, Ibaraki-Ken, 311–19, Japan
S. Zembutsu
Affiliation:
NTT Optoelectronics Laboratories, Tokai-Mura, Naka-Gun, Ibaraki-Ken, 311–19, Japan
S. Tohno
Affiliation:
NTT Optoelectronics Laboratories, Tokai-Mura, Naka-Gun, Ibaraki-Ken, 311–19, Japan
A. Katsui
Affiliation:
NTT Optoelectronics Laboratories, Tokai-Mura, Naka-Gun, Ibaraki-Ken, 311–19, Japan
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Abstract

The formation and growth of islands on GaAs substrates has been observed during high temperature (550°C) heat treatment of GaAs substrates in the presence of H2Se. We have used SEM, TEM and XPS to characterize these islands and we have proposed a mechanism for island formation based on coarsening of Ga on the substrate surface followed by reaction with H2Se to form Ga2Se3.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 202: Symposium C – Evolution of Thin Film and Surface Microstructure , 1990 , 89
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

[1]Ga2Se3 oxidizes readily in air to produce Ga2O3, see Mukherjee, A.K., Dhawan, U., Kundra, K.D. and Ali, S.Z., Bull. Mater. Sci., 2, 55, (1980).Google Scholar
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[4] McClelland, Robert, unpublished researchGoogle Scholar
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