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Combinatorial Chemical Vapor Deposition of Metal Silicate Films Using Tri(t -butoxy) silanol and Anhydrous Metal Nitrates

Published online by Cambridge University Press:  01 February 2011

Lijuan Zhong ,
Fang Chen ,
Stephen A. Campbell  and
Wayne L. Gladfelter
Lijuan Zhong
Affiliation:
Deptartment of Chemistry, University of Minnesota, Minneapolis, MN 55455, U.S.A.
Fang Chen
Affiliation:
Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN 55455, U.S.A.
Stephen A. Campbell
Affiliation:
Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN 55455, U.S.A.
Wayne L. Gladfelter
Affiliation:
Deptartment of Chemistry, University of Minnesota, Minneapolis, MN 55455, U.S.A.
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Abstract

A modified low-pressure chemical vapor deposition reactor was used to create compositional spreads of MO2/SiO2 films (M = Hf, Zr and Sn) using tri(t-butoxy) silanol and anhydrous metal nitrates of hafnium, zirconium and tin at temperatures below 250 °C. The compositional spreads formed by this process were characterized by ellipsometry and Rutherford backscattering spectrometry. A survey of possible reactions involved in the deposition is included.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 804: Symposium JJ – Combinatorial and Artificial Intelligence Methods in Materials Science II , 2003 , JJ2.3
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

(1) Wilk, G. D.; Wallace, R. M.; Anthony, J. M. J. Appl. Phys. 2000, 87, 484.Google Scholar
(2) Smith, R. C.; Hoilien, N.; Chien, J.; Campbell, S. A.; Roberts, J.; Gladfelter, W. L. Chem. Mater. 2003, 15, 292.Google Scholar
(3) Xia, B.; Chen, F.; Campbell, S.A.; Roberts, J.T.; Gladfelter, W.L. Chem. Vapor. Deposition AcceptedGoogle Scholar
(4) Schmeisser, M. Angew. Chem. 1955, 67, 493.Google Scholar
(5) Field, B. O. H., C. J. Proc. Chem. Soc. 1962, 76.Google Scholar
(6) Terry, K. W.; Lugmair, C. G.; Tilley, T. D. J. Am. Chem. Soc. 1997, 119, 9745.Google Scholar
(7) Kriesel, J. W.; Sander, M. S.; Tilley, T. D. Adv. Mater. 2001, 13, 331.Google Scholar
(8) Hausmann, D.; Becker, J.; Wang, S. L.; Gordon, R. G. Science 2002, 298, 402.Google Scholar